Low-temperature CVD TiN as a diffusion barrier between gold and silicon

Musher, Joshua N.; Gordon, Roy G.

doi:10.1007/bf03030216

Cited by 16 publications

(13 citation statements)

References 14 publications

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“…6,8,28 Oxygen was incorporated into the sample during growth, and also after deposition for those films that were porous (see Sec. Generally associated with increasing film resistivities, oxygen also plays a key role in the barrier properties of TiN.…”

Section: B Stoichiometrymentioning

confidence: 99%

“…A PVD barrier will fail at 350 ± C in an Au͞TiN͞Si metallization scheme, 5 while a CVD barrier can tolerate 550 ± C. 6 Raaijmakers and co-workers showed that a PVD barrier needs to be twice as thick as a CVD barrier to provide the same degree of protection. A PVD barrier will fail at 350 ± C in an Au͞TiN͞Si metallization scheme, 5 while a CVD barrier can tolerate 550 ± C. 6 Raaijmakers and co-workers showed that a PVD barrier needs to be twice as thick as a CVD barrier to provide the same degree of protection.…”

Section: Introductionmentioning

confidence: 99%

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Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

Musher

Gordon

1996

J. Mater. Res.

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Near stoichiometric titanium nitride (TiN) was deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia using atmospheric pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments provided kinetic data and continuous operation uniformly coated 150-mm substrates. Growth rate, stoichiometry, and resistivity are examined as functions of deposition temperature (190-420 ± C), ammonia flow relative to TDMAT (0-30), and total gas-flow rate (residence time 0.3 -0.6 s). Films were characterized by sheet resistance measurements, Rutherford Backscattering Spectrometry, and X-Ray Photoelectron Spectrometry. Films deposited without ammonia were substoichiometric (N͞Ti , 0.6 -0.75), contained high levels of carbon (C͞Ti 0.25-0.40) and oxygen (O͞Ti 0.6 -0.9), and grew slowly. Small amounts of ammonia (NH 3 ͞TDMAT > 1) brought impurity levels down to C͞Ti , 0.1 and O͞Ti 0.3 -0.5. Ammonia increased the growth rates by a factor of 4-12 at temperatures below 400 ± C. Films 500Å thick had resistivities as low as 1600 mV-cm when deposited at 280 ± C and 1500 mV-cm when deposited at 370 ± C. Scanning electron micrographs indicate a smooth surface and poor step coverage for films deposited with high ammonia concentrations.

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Section: B Stoichiometrymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

Musher

Gordon

1996

J. Mater. Res.

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“…Additional metal adhesion and diffusion barrier layers may also be necessary. [16] These metal coatings can create an undesirable temperature-dependent mirror curvature due to intrinsic stress of the metal layers and the difference in thermal expansion coefficients of the metal layers and the bulk silicon mirror. This problem is especially severe if the metal coating is applied only to one side of the bulk mirror.…”

Section: 21mentioning

confidence: 99%

<title>MOEMS: enabling technologies for large optical cross-connects</title>

Chu¹,

Lee²,

Park³

et al. 2001

SPIE Proceedings

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Rapid growth in demand for optical network capacity and the sudden maturation of wavelength-division-multiplexing (WDM) technologies have led to development of long-haul optical network systems that transport tens to hundreds of wavelengths per fiber, with each wavelength modulated at 10Gb/s or more. Micro-optical-electromechanical systems (MOEMS) devices, such as mirrors and lenses, are found to be the enabling technologies to build the next-generation cost-effective and reliable large port-count optical cross-connects (OXCs). While the basic roles of these MOEMS devices in an optical cross-connect are easily understood, the detailed mechanical design, electronics integration, packaging, control, and usage of these devices must reflect the stringent system requirements of the optical design and the electronic hardware of the network switch element. Due to the inter-dependence of many design parameters, manufacturing tolerances, and performance requirements, careful tradeoffs must be made to create reliable and manufacturable MOEMS devices. We describe various design tradeoffs and multi-disciplinary system considerations for building MOEMS-based large OXCs.

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“…Unfortunately, the TiCl 4 -based Ti/TiN process temperature is higher than 600˝C, and it constrains their application at the contact level only [2, 9,10]. Efforts to reduce the deposition temperature by different deposition process approaches are included with sequential flow deposition (SFD) [2], atmosphere pressure CVD (APCVD) [11], electron cyclotron resonance CVD (ECR-CVD) [12] and atomic layer deposition (ALD) [13], etc. Although the TiCl 4 -based TiN barrier process has a much lower impurity level than that of the MOCVD TiN process, remaining chloride impurities still have a deterioration in the long-term reliability of the device [14].…”

Section: Introductionmentioning

confidence: 99%

TiCl4 Barrier Process Engineering in Semiconductor Manufacturing

et al. 2016

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Titanium nitride (TiN) not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti) and TiN processes, which are commonly used as diffusion barriers in via/contact applications. However, engineers frequently struggle at the via/contact module in the beginning of every technology node. As devices shrink, barrier processes become more challenging to overcome the both the physical fill-in and electrical performance requirements of advanced small via/contact plugs. The aim of this paper is to investigate various chemical vapor deposition (CVD) TiCl 4 -based barrier processes to serve the application of advanced small via/contact plugs and the metal gate processes. The results demonstrate that the plasma-enhanced chemical vapor deposition (PECVD) TiCl 4 -based Ti process needs to select a feasible process temperature to avoid Si surface corrosion by high-temperature chloride flow. Conventional high step coverage (HSC) CVD TiCl 4 -based TiN processes give much better impurity performance than metal organic chemical vapor deposition (MOCVD) TiN. However, the higher chloride content in HSC film may degrade the long-term reliability of the device. Furthermore, it is evidenced that a sequential flow deposition (SFD) CVD TiCl 4 -based process with multiple cycles can give much less chloride content, resulting in faster erase speeds and lower erase levels than that of conventional HSC TiN.

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Low-temperature CVD TiN as a diffusion barrier between gold and silicon

Cited by 16 publications

References 14 publications

Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

<title>MOEMS: enabling technologies for large optical cross-connects</title>

TiCl4 Barrier Process Engineering in Semiconductor Manufacturing

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