Area laser crystallized LTPS TFTs with implanted contacts for active matrix OLED displays

Persidis, Efstathios; Baur, Holger; Pieralisi, Fabio; Schalberger, Patrick; Fruehauf, Norbert

doi:10.1016/j.sse.2007.10.014

Cited by 24 publications

(10 citation statements)

References 8 publications

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“…The activation of dopant is essential to get low sheet resistance of the source/drain (SD) region of LTPS TFT. 3,4 It's because the resistance of non-activated poly Si film is too high in the range of M/sq to get low contact resistance between the active and the SD. For a glass substrate, the ion dopant activation process is carried out at the temperature higher than 550 o C for a couple of minutes within the conveyor type furnace to yield low resistance SD region with good uniformity.…”

Section: Activation Of Dopant In Crystallized Si Source/drainmentioning

confidence: 99%

57‐1: Invited Paper: Application of Rapid Thermal Annealing Process to the Display Technology

Park

Jeong

et al. 2018

Symp Digest of Tech Papers

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Section: Activation Of Dopant In Crystallized Si Source/drainmentioning

confidence: 99%

57‐1: Invited Paper: Application of Rapid Thermal Annealing Process to the Display Technology

Park

Jeong

et al. 2018

Symp Digest of Tech Papers

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“…There is a strong need for the low temperature synthesis of crystalline silicon films for electronics such as displays and solar cells [86][87][88][89]. The most popular method to synthesize microcrystalline films is to deposit amorphous phase silicon on a glass substrate than to crystallize it by excimer laser, thermal annealing, or metal-induced crystallization [90][91][92].…”

Section: Low-temperature Deposition Of Crystalline Siliconmentioning

confidence: 99%

Non-Classical Crystallization of Thin Films and Nanostructures in CVD Process

Jung¹,

Hwang²

2016

Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

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Non-classical crystallization, where crystals grow by the building blocks of nanoparticles, has become a significant issue not only in solution but also in the gas phase synthesis such as chemical vapor deposition (CVD). Recently, non-classical crystallization was observed in solution in-situ by transmission electron microscope (TEM) using a liquid cell technique. In various CVD processes, the generation of charged nanoparticles (CNPs) in the gas phase has been persistently reported. Many evidences supporting these CNPs to be the building blocks of thin films and nanostructures were reported. According to non-classical crystallization, many thin films and nanostructures which had been believed to grow by individual atoms or molecules turned out to grow by the building blocks of CNPs. The purpose of this paper is to review the development and the main results of non-classical crystallization in the CVD process. The concept of non-classical crystallization is briefly described. Further, it will be shown that the puzzling phenomenon of simultaneous diamond deposition and graphite etching, which violates the second law of thermodynamics when approached by classical crystallization, can be approached successfully by nonclassical crystallization. Then, various aspects of non-classical crystallization in the growth of thin films and nanostructures by CVD will be described.

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“…In the flat panel display (FPD) domain, mainly in the active matrix liquid crystal display (AMLCD) and the active matrix organic light-emitting display (AMOLED) fields, polysilicon lateral thin film transistor (LTFT) based on low-temperature (T≤600°C) has been widely used (1) (2). However, with the rapid development of these displays, higher drive current is required as well as higher aperture ratio.…”

Section: Introductionmentioning

confidence: 99%

Decreasing the Off-Current for Vertical TFT by Using an Insulating Layer between Source and Drain

Zhang

Jacques²,

Rogel³

et al. 2013

ECS Trans.

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A novel polysilicon vertical thin film transistor (VTFT) has been fabricated based on a low-temperature (T≤600°C) process. This new structure eliminates the large overlapping area between source and drain, and thus reduced the off-current and increased the I on /I off ratio. The technologically key point lies in the introduction of an insulating layer between source and drain, and the electrical properties of the fabricated VTFTs using different insulating layers are compared. These first results highlight that the SiO 2 insulating layer shows great advantages over the Si 3 N 4 insulating layer. The reduced off-current has revealed some potential applications for high density integration and high drive current.

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Area laser crystallized LTPS TFTs with implanted contacts for active matrix OLED displays

Cited by 24 publications

References 8 publications

57‐1: Invited Paper: Application of Rapid Thermal Annealing Process to the Display Technology

57‐1: Invited Paper: Application of Rapid Thermal Annealing Process to the Display Technology

Non-Classical Crystallization of Thin Films and Nanostructures in CVD Process

Decreasing the Off-Current for Vertical TFT by Using an Insulating Layer between Source and Drain

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