2007
DOI: 10.1080/09500830701213387
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Approaches towards ferroelectric control of thin film magnetism

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Cited by 24 publications
(13 citation statements)
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“…Such materials are promising for several devices with novel functionalities like magnetic-field sensors and electric-write magnetic-read random-access memories [8][9][10][11][12]. In film-grown heterostructures of materials presenting the magnetoelectric effect, several advances have been made towards the magnetic control of ferroelectricity [13][14][15] and the electric control of thin film magnetism [16][17][18].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Such materials are promising for several devices with novel functionalities like magnetic-field sensors and electric-write magnetic-read random-access memories [8][9][10][11][12]. In film-grown heterostructures of materials presenting the magnetoelectric effect, several advances have been made towards the magnetic control of ferroelectricity [13][14][15] and the electric control of thin film magnetism [16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…Such materials are promising for several devices with novel functionalities like magnetic-field sensors and electric-write magnetic-read random-access memories [8][9][10][11][12]. In film-grown heterostructures of materials presenting the magnetoelectric effect, several advances have been made towards the magnetic control of ferroelectricity [13][14][15] and the electric control of thin film magnetism [16][17][18].The magnetoelectric effect can have several origins [19-21] but the materials exhibiting it are few since ferroelectricity and magnetism have different origins [5]. Probably the most studied single-component multiferroic compound is the bismuth ferrite, BiFeO 3 , high-quality films of which have been grown recently [22][23][24].…”
mentioning
confidence: 99%
“…This indirect magnetoelectric effect could be due to stress-induced anisotropy or stress-induced phase changes. However, the substrate should have a large piezoelectric effect and at the same time should allow epitaxial growth of magnetic films for quantitative analysis [38]. Similarly, in the case of magnetic materials which have charge carrier density dependent magnetic properties, polarization of an adjacent ferroelectric film can control the magnetization near the interface.…”
Section: Synthesized Artificial Multiferroic Heterostructuresmentioning
confidence: 99%
“…This was first demonstrated on a BTO/LSMO heterostructure 31 and was recently confirmed in a variety of systems. 16,32,33 The changes in magnetization and resistance are primarily attributed to the strain induced coupling at the interface. Until now, most studies are confined to heterosystems composed of compound FM materials and complex FE oxides.…”
Section: Two-phase Multiferroic Batio 3 /Fe Heterostructurementioning
confidence: 99%