We investigate the influence of a well-defined reversible biaxial strain ≤ 0.12 % on the magnetization ( M ) of epitaxial ferromagnetic manganite films. M has been recorded depending on temperature, strain and magnetic field in 20 -50 nm thick films. This is

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Epitaxially grown La0.7Sr0.3MnO3 thin films show resistance modulations induced by the inverse piezoeffect of the employed Pb(Mg1∕3Nb2∕3)O3-PbTiO3(001) (PMN-PT) substrates. The in-plane strain state of the films can continuously be tuned by application of a piezovoltage to PMN-PT. The lattice deformation of a PMN-PT(001) substrate was quantified by x-ray measurements under an electric field. Variation of in-plane lattice parameters by ∼0.06% reversibly changes the resistance of the manganite films by up to 9% at 300 K and shifts the magnetic Curie temperature. Films of different thicknesses from 50 to 290 nm, offering different as-grown strain states, have been studied.

Epitaxial ferroelectric-ferromagnetic field effect devices of PbZr0.52Ti0.48O3∕La0.7Sr0.3MnO3 (PZT∕LSMO) with narrow manganite channels (⩽7nm) show butterflylike hysteretic resistance modulations (ΔR) which are commensurate with strain variation from inverse piezoelectric effect of PZT. Based on the type of observed resistance hysteresis loops, contributions from electric field effect and strain effect have been distinguished for devices with varied channel thickness. The strain-induced ΔR decreases with increasing channel thickness. The ΔR from field effect is low in the LSMO channels with 30% Sr doping.

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