Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections

Patrick, W.; Guthrie, W. L.; Standley, C. L.; Schiable, Paul M.

doi:10.1149/1.2085872

Cited by 240 publications

(99 citation statements)

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“…It uses appropriate consumables (pad, conditioner, and slurry) to produce the pattern profiles and selectivity required for different surface layers. 1,2 In most cases, a selected layer can be removed through the optimal design of slurries, which can include various kinds of abrasives and chemical components. [3][4][5] The various chemicals and abrasives in slurries can affect the interfacial surfaces that occur during the CMP process at different process temperatures.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)

Yang

Kim

et al. 2010

Journal of Elec Materi

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Temperature control to stabilize the microscale contact surface between the pad and wafer, especially to prevent pad surface degradation, plays an important role in chemical mechanical polishing (CMP) processing of sub-50-nm devices. In this work, we investigated the phenomenon of pad surface hardening for various process temperatures and developed an effective method to minimize changes of the mechanical properties of the pad surface using diamond conditioner. The pad hardening characteristics were measured based on the force-distance (F-D) curve obtained by atomic force microscopy (AFM), and thermogravimetric analysis (TGA). F-D curve data showed that the increase of the elastic modulus with pad usage time at high process temperature was $1.5 times higher than at low process temperature. Also, TGA of a used polishing pad revealed a link between the endothermic peak intensity at 600°C and pad surface hardening. To prevent surface glazing or hardening throughout the lifetime of a pad at high process temperature, the optimum diamond size was investigated. Pad wear was investigated for various diamond conditioners with diamond grit size ranging from 100 lm to 270 lm. The results of pad surface analysis using scanning electron microscopy (SEM) and three-dimensional optical profiling showed that the 210 lm grit size was best for removing deformed layers, with the pad surface remaining consistent during the lifetime of the pad as verified by TGA and the F-D curve. The results of pad surface analysis are important for the design of conditioners that can produce pads with stable dynamic mechanical properties and prolonged lifetime at high process temperature.

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Section: Introductionmentioning

confidence: 99%

Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)

Yang

Kim

et al. 2010

Journal of Elec Materi

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“…In CMP, the relative motion between pad and wafer is close to unidirectional and their relative sliding speed is almost uniform across the chip since the pad and wafer rotate at the same or near same angular velocity [22]. Hence, Eq.…”

Section: Model Formulationmentioning

confidence: 99%

A dishing model for STI CMP process

Chang

2005

Microelectronic Engineering

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“…In addition, the role of the uniform polishing velocity in the planarization was highlighted [11,12]. Though it is of great importance in the process recipe in CMP practice, the mechanism of influence of the polishing velocity on nonuniformity and the analytic correlation between them remain unexplored.…”

Section: Introductionmentioning

confidence: 99%

Chemical Mechanical Polishing

Tsai

Hocheng

Huang

2012

Advanced Analysis of Nontraditional Machining

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Chemical mechanical planarization (CMP) has emerged as an indispensable processing technique for planarization in submicron multilevel VLSI. An analytic model of the material removal rate is proposed for CMP. The effects of applied pressure and polishing velocity are derived by considering the chemical reaction as well as the mechanical bear-and-shear processes. The material removal rate is less linearly correlated to the pressure and relative velocity than that predicted by the frequently cited empirical Preston equation [1]. The effects of CMP kinematic variables on wafer nonuniformity are also investigated. The significance of velocity uniformity is demonstrated by both analysis and experiment. For the endpoint detection, an accurate in situ monitoring method can significantly improve both yield and throughput. A model for CMP polishing pad temperature that is capable of predicting the CMP endpoint in situ is established, based on the total consumed kinematic energy. The process endpoint is detectable by application of the proposed regression method to the measured temperature rise. In addition, the chapter develops an endpoint monitoring method that uses acoustic emissions that occur during CMP. The method considers differences in friction characteristics between the polishing pad and the copper metal overlay. For the flow of slurry between wafer and pad, this study provides a visualized characterization of the amount and distribution of the fluid film between wafer and pad. Digital photographs taken through the transparent carrier and dyed fluid are used to analyze the fluid film.

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Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections

Cited by 240 publications

References 1 publication

Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)

Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)

A dishing model for STI CMP process

Chemical Mechanical Polishing

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