Abstract:Chemical mechanical planarization (CMP) has emerged as an indispensable processing technique for planarization in submicron multilevel VLSI. An analytic model of the material removal rate is proposed for CMP. The effects of applied pressure and polishing velocity are derived by considering the chemical reaction as well as the mechanical bear-and-shear processes. The material removal rate is less linearly correlated to the pressure and relative velocity than that predicted by the frequently cited empirical Pres… Show more
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