A dishing model for STI CMP process

Chang, Shih-Hsiang

doi:10.1016/j.mee.2005.07.002

Cited by 14 publications

(16 citation statements)

References 12 publications

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“…(1) the polishing pad was 16 mm in diameter, (2) there was no flow of fresh slurry entering the wafer-pad interface (3) the "wafer" was a stationary glass slide instead of a rotating wafer, and (4) there are a number of CMP parameters varied during actual CMP which were not varied during this experiment. Nonetheless, Fig.…”

Section: Resultsmentioning

confidence: 99%

A Comparison of Active Particle Models for Chemical Mechanical Polishing

Mpagazehe

Higgs

2013

ECS J. Solid State Sci. Technol.

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A multitude of models exist to predict the material removal rate (MRR) during CMP. Common among many of these models is the prediction of the MRR based on the product of the material removal rate per particle (MRR PP ) and the number of active particles, N act , actively contributing to the material removal. Discrepancies between CMP models and experiments are sometimes compensated for by empirical wear coefficients that are used as fitting parameters placed on the overall CMP model. However, such empirical correlations can obscure deficiencies in the prediction of the material removed per particle and the number of active particles. A decoupled understanding of both MRR PP and N act is essential for accurate modeling of CMP. This work investigates the predictions of several active particle models, decoupled from the prediction of the MRR, to assess their agreement. In addition to the number of active particles, the models are used to predict the number of particles in the interface and the number of particles eligible to become active. It is found that although the models differ greatly in their assumptions to predict these quantities, there is some similarity in their prediction of the number of active particles.Integrated circuits (ICs) are used in almost every modern electronic device. Typically, IC's are built on silicon wafers in a process that involves many deposition and material removal steps. Chemical mechanical polishing (CMP) is a commonly used planarization technique for the IC manufacturing industry. 1 It is a critical process in which material is removed from the wafer before the next layer of the IC is constructed. CMP is employed because of its ability to produce flat surfaces with low levels of roughness. Both of these qualities are desired during IC fabrication because variation in the surface of one layer can propagate to other layers, as the IC is fabricated. Moreover, the critical downstream step of lithographic patterning can be unsuccessful if the wafer surface is not planarized. During CMP, the wafer is rotated and pressed into a rotating polishing pad. A chemically-active slurry, containing abrasive nanoparticles, is entrained between the rotating polishing pad and the wafer. The nanoparticles in the slurry wear the surface of the wafer until the unwanted material is removed. Differential wear rates on the wafer during CMP have been shown to produce defects in the IC. 2 These defects negatively affect the IC performance and can lead to reduced production yields. As a result, there have been many models developed which have helped to elucidate the complex behavior during CMP in the past few years. 3-6 In 2009, Oh and Seok 7 proposed that non-Prestonian behavior during CMP could be modeled using a modified version of Zhao and Chang's prediction for active particles 3 and a diffusion model to capture the effect of the slurry chemicals on the wafer. 7 Oh and Seok introduced two fitting parameters, related to the pad-wafer contact, to align the number of abrasive particles removing material p...

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Section: Resultsmentioning

confidence: 99%

A Comparison of Active Particle Models for Chemical Mechanical Polishing

Mpagazehe

Higgs

2013

ECS J. Solid State Sci. Technol.

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“…1(b)). The observance of area effect is typical of microfabrication processes (Hedlund et al 1994;Chang 2005). Different sizes of patterned hydrogel features were obtained based on the photolithographically defined patterns in parylene C (Fig.…”

Section: Experimental Methodsmentioning

confidence: 97%

Protein functionalized micro hydrogel features for cell–surface interaction

Bhatnagar

Nixon

Kim

et al. 2008

Biomed Microdevices

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Cross-linked hydrogel features have been patterned using subtractive lift-off of polymerized hydrogel film. Projection lithography and oxygen plasma etch was used to pattern parylene C polymer film. Molecular self-assembly of polymerizable monolayer was obtained in solution-phase and acrylamide based hydrogel was polymerized using free-radical polymerization on this substrate. Parylene C film was mechanically lifted-off to remove the blanket hydrogel film and micro hydrogel features (muhf) were obtained attached to the predefined patterns in the range from 1 to 60 mum. The muhf were functionalized with aldehyde functional groups, and proteins were coupled to them using Schiff base chemistry followed by reductive amination. Interaction of mesenchymal stem cells with transforming growth factor-beta 1 (TGF-beta1) functionalized muhf was studied, and TGF-beta1 was found to retain its tumor suppression activity.

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“…In the semiconductor manufacturing process, chemical mechanical polishing (CMP) is becoming more important as the integration of semiconductor devices increases [1][2][3][4][5]. CMP is a process that involves simultaneous chemical reactions and mechanical material removal, enabling the formation of interlayer dielectrics (ILD) [6][7][8], shallow trench isolation (STI) [6,9,10], metal wiring [11][12][13][14], and metal contacts [15][16][17] through the global planarization of thin films. In CMP, a wafer is attached to a carrier, and a polishing pad is attached to a platen, as shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime

Son

Lee

2021

Applied Sciences

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Chemical–mechanical polishing (CMP) is a process that planarizes semiconductor surfaces and is essential for the manufacture of highly integrated devices. In CMP, pad conditioning using a disk with diamond grit is adopted to maintain the surface roughness of the polishing pad and remove polishing debris. However, uneven pad wear by conditioning is unavoidable in CMP. In this study, we propose a contact-area-changeable conditioning system and utilize it to conduct a preliminary study for improving pad lifetime. Using the conventional conditioning method (Case I), the material removal rate (MRR) decreased rapidly after 12 h of conditioning and the within-wafer non-uniformity (WIWNU) increased. However, the results of conditioning experiments show that when using a contact-area-changeable conditioning system, uniform pad wear can be obtained in the wafer–pad contact area and the pad lifetime can be extended to more than 20 h. Finally, the newly proposed conditioning system in this study may improve the CMP pad lifetime.

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A dishing model for STI CMP process

Cited by 14 publications

References 12 publications

A Comparison of Active Particle Models for Chemical Mechanical Polishing

A Comparison of Active Particle Models for Chemical Mechanical Polishing

Protein functionalized micro hydrogel features for cell–surface interaction

Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime

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