Antenna-coupled field-effect transistors for multi-spectral terahertz imaging up to 425 THz

Abstract

We demonstrate for the first time the applicability of antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs) for multi-spectral imaging from 0.76 to 4.25 THz. TeraFETs were fabricated in a commercial 90-nm CMOS process and noise-equivalent powers of 59, 20, 63, 85 and 110 pW/√(Hz) at 0.216, 0.59, 2,52, 3.11 and 4.25 THz, respectively, have been achieved. A set of TeraFETs has been applied in raster-scan transmission and reflection imaging of pellets of sucrose and tartaric acid simulating common plastic explosives. Transmittance values are in good agreement with Fourier-transform infrared spectroscopy data. The spatial distribution of the components in the samples has been determined from the transmission data using principal component analysis.

Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene

“…5 In this context, field effect transistors (FETs) have shown their potential as sensitive THz detectors realized with various traditional semiconductor materials. [6][7][8][9][10] In an effort to close the so-called terahertz gap (loosely defined as 0.3-10 THz) a focus is on high-mobility materials, and due to its high room-temperature mobility (up to 10,000 cm 2 /Vs on SiO2) and high carrier saturation velocity, 11,12 graphene has recently attracted interest as a potential material for high-frequency applications. 13,14 Theoretical analysis of graphene confirms its potential for use as a THz FET detector.…”

“…[17][18][19][20] In the THz range, room-temperature detection with GFETs has been reported up to 3.11 THz. [21][22][23] Thus far, even the best graphene-based FET THz detectors have had noise-equivalent powers (NEPs) close to two orders of magnitude higher than those demonstrated in other material systems such as Si MOSFETs (>17 pW/Hz 0.5 ) 7,8 and GaN high-electron mobility transistors (40 pW/Hz 0.5 ), 9 or than the NEPs of other detector technologies like YBCO bolometers (200 pW/Hz 0.5 ), 24 and zerobias Schottky diode detectors (<20 pW/Hz 0.5 ).…”

Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

“…The detection of the THz frequency electromagnetic waves is demonstrated employing the HEMT as a TeraFET detector [11]. A commercial VDI electronic frequency multiplier chain emitting up to 11 mW power at 0.3 THz frequency was used as the source.…”

“…These achievements encourage the creation of novel plasmonic THz devices in the future. THz antenna connection [12] and by reduction of the plasmonic channel measurements [11].…”

Hydrodynamic modelling of terahertz rectification in AlGaN/GaN high electron mobility transistors

“…The plasmons, relating to a wave-like propagation of charge carriers, can manifest already at microwaves, yet they become increasingly pronounced in the terahertz (THz) frequency range. By now, it has been numerously reported in experimental [2,3] and theoretic [4,5] studies that plasmonic rectification can be employed for efficient detection of THz radiation. Despite such progress, there are many unresolved questions left regarding the validity of predictions from existing hydrodynamic models when applied for the modeling of practical devices (rectifiers or detectors).…”