Hydrodynamic modelling of terahertz rectification in AlGaN/GaN high electron mobility transistors

Vyšniauskas, Juozas; Lisauskas, Alvydas; Bauer, Maris; Cibiraite, Dovile; Matukas, Jonas; Roskos, Hartmut G.

doi:10.1088/1742-6596/906/1/012023

Cited by 9 publications

(7 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When Re is large, the convective term of the Navier-Stokes equation dominates. Combined with an appropriate device geometry, this can lead to a flow resistance that is directiondependent and therefore rectification up to terahertz frequencies [51][52][53]. An example of such a geometry is the Tesla Valve (figure 2).…”

Section: Othersmentioning

confidence: 99%

Eliminating the channel resistance in two-dimensional systems using viscous charge flow

Huang,

Paul,

Perrin

et al. 2024

2D Mater.

View full text Add to dashboard Cite

Driven by the pursuit of high-performance electronic devices and the exploration of quantum phenomena, research into two-dimensional (2D) systems and materials, has unveiled their exceptional properties and potential applications. While extensive efforts have centered on minimizing contact resistance, reducing the intrinsic channel resistance within the conducting material remains a formidable challenge. Research in this direction has focused on investigating superconductivity and ballistic transport. However, the practical applications of these phenomena are usually constrained by the requirement for cryogenic conditions. Charge transport in the hydrodynamic regime emerges as a versatile alternative, offering enhanced resilience to these challenges, and making it a promising avenue for effectively reducing channel resistance in 2D systems. The current perspective delves into charge hydrodynamics, exploring its mechanisms, recent advancements, enduring challenges, and its potential in reducing the channel resistance.

show abstract

Section: Othersmentioning

confidence: 99%

Eliminating the channel resistance in two-dimensional systems using viscous charge flow

Huang,

Paul,

Perrin

et al. 2024

2D Mater.

View full text Add to dashboard Cite

show abstract

“…Comparing with theory predictions, we notice that both modeled and measured responsivities nearly coincide only for gate bias voltages near 0.9 V, whereas in the vicinity of the threshold voltage (V th = 0.43 V), we did not observe as strong responsivity as should follow from our analytic predictions. It is possible that the discrepancy can originate either from the simplified description of the receiving antenna or from the identification of parasitic components or from the simplifications in the physical description of charge transport (i.e., omitted carrier heating [34], [35], a quasi-static description of charge carrier control by gate voltage [16], [34], etc. ).…”

Section: Sensitivitymentioning

confidence: 99%

Field-Effect Transistor Based Detectors for Power Monitoring of THz Quantum Cascade Lasers

Zdanevičius

Cibiraite

Ikamas

et al. 2018

IEEE Trans. THz Sci. Technol.

Self Cite

View full text Add to dashboard Cite

We report on circuit simulation, modeling, and characterization of field-effect transistor based terahertz (THz) detectors (TeraFETs) with integrated patch antennas for discrete frequencies from 1.3 to 5.7 THz. The devices have been fabricated using a standard 90-nm CMOS technology. Here, we focus in particular on a device showing the highest sensitivity to 4.75-THz radiation and its prospect to be employed for power monitoring of a THz quantum cascade laser used in a heterodyne spectrometer GREAT (German REceiver for Astronomy at Terahertz frequencies). We show that a distributed transmission line based detector model can predict the detector's performance better than a device model provided by the manufacturer. The integrated patch antenna of the TeraFET designed for 4.75 THz has an area of 13 × 13 µm 2 and a distance of 2.2 µm to the ground plane. The modeled radiation efficiency at the target frequency is 76% with a maximum directivity of 5.5, resulting in an effective area of 1750 µm 2. The detector exhibits an area-normalized minimal noise-equivalent power of 404 pW/ √ Hz and a maximum responsivity of 75 V/W. These values represent the state of the art for electronic detectors operating at room-temperature and in this frequency range.

show abstract

“…In the second group of 2D models, the 2D plane is parallel to the electron transport direction and perpendicular to the gate electrode plane. Papers related to the second group [29][30][31][32][33][34] use mainly TCAD (technology computer-aided design) program packages in which 2D Poisson equation is included. Realistic structures in the non-resonant detection mode have been modelled using these packages: Si nMOS [29,31,34], AlGaN/GaN [30,34], Si/SiGe [32] and AlGaAs/ InGaAs [33,34].…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional hydrodynamic modelling of AlGaN/GaN transistor-based THz detectors

Vyšniauskas,

Ikamas,

Vizbaras

et al. 2023

physics

Self Cite

View full text Add to dashboard Cite

Here, we report on numerical modelling of AlGaN/GaN HEMT terahertz detectors using a two-dimensional solver based on three Boltzmann transport equation (BTE) moments and the Poisson equation. We use the Synopsys TCAD Sentaurus program package, which offers a wide material database and the possibility to include traps and polarization charges for the formation of the channel without any doping. The implications of different levels of model simplifications are addressed both analytically and numerically. We calculated the current responsivity R, to THz radiation on the drain voltage in the frequency range 0.01-3.0 THz for three AlGaN layer thicknesses d= 15, 20 and 25 nm and different gate lengths. We demonstrate that only a hydrodynamic model can reproduce the change in the sign in current responsivity at the gate voltage UG9 (R1 = 0 at UG = UG0). The energy flux factor in the energy balance equation determines this effect. For the simulated structures, we find that the noise equivalent power may be as low as 0.1 pW/VHz at 0.04 THz and 10 pW/VHz at 3.0 THz.

show abstract

Hydrodynamic modelling of terahertz rectification in AlGaN/GaN high electron mobility transistors

Cited by 9 publications

References 10 publications

Eliminating the channel resistance in two-dimensional systems using viscous charge flow

Eliminating the channel resistance in two-dimensional systems using viscous charge flow

Field-Effect Transistor Based Detectors for Power Monitoring of THz Quantum Cascade Lasers

Two-dimensional hydrodynamic modelling of AlGaN/GaN transistor-based THz detectors

Contact Info

Product

Resources

About