Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

Jakštas, Vytautas; Jorudas, Justinas; Janonis, Vytautas; Minkevičius, Linas; Kašalynas, Irmantas; Prystawko, P.; Leszczyński, M.

doi:10.3952/physics.v58i2.3748

Cited by 10 publications

(6 citation statements)

References 12 publications

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“…Under reverse bias, leakage currents were saturated at approximately −5 V and remained constant until the breakdown (see Figure 6 b). Moreover, SBDs demonstrated a sufficiently high j ON / j OFF ratio; for example, for SBD with L = 40 µm, the highest achieved value was found to be more than three orders of magnitude, j ON / j OFF ≥ 3200, taking into account also the reverse-current densities prior to a breakdown which occurred at a voltage of −780 V. Furthermore, a 2.5 times improvement in the maximum current density was obtained in comparison with previously reported SBDs fabricated on standard AlGaN/GaN HEMT structures with a thick GaN:C buffer [ 8 ]. Note the dependence of forward current on the distance between ohmic and Schottky contacts indicating good performance of the fabricated ohmic contacts with negligible losses.…”

Section: Resultsmentioning

confidence: 55%

“…The devices were fabricated using standard ultraviolet (UV) photolithography [ 8 , 22 ]. Mesas of 140 nm depth were formed by inductively coupled plasma reactive ion etching (ICP-RIE) (Oxford Instruments, Bristol, UK) using Cl plasma and chemical treatment in tetramethylammonium hydroxide (TMAH) solution (Microchemicals, Ulm, Germany).…”

Section: Materials and Methods (Experimental Details)mentioning

confidence: 99%

“…While sapphire and silicon substrates are the most cost-effective, the best characteristics are achieved on transistors fabricated on silicon carbide (SiC) and GaN substrates. Considerable improvements in electrical performance including the low-frequency noise were demonstrated on the AlGaN/GaN/sapphire platform [ 8 , 9 ]. The advantage of the SiC over GaN substrates is higher SiC thermal conductivity and therefore potentially better thermal management of the transistors fabricated using AlGaN/GaN/SiC structures.…”

Section: Introductionmentioning

confidence: 99%

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AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

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Section: Resultsmentioning

confidence: 55%

Section: Materials and Methods (Experimental Details)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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“…The ohmic contacts were fabricated using procedures of the Ti/Al/Ni/Au (30/90/20/100 nm) metal thin-film deposition, followed by the rapid thermal annealing (RTA), similarly to the procedures referenced in ref. 13 . The Schottky contacts were made of Ni/Au (25/200 nm) metal stack.…”

Section: Methodsmentioning

confidence: 99%

Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN

Gaubas

Čeponis

Meškauskaite

et al. 2019

Sci Rep

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GaN-based structures are promising for production of radiation detectors and high-voltage high-frequency devices. Particle detectors made of GaN are beneficial as devices simultaneously generating of the optical and electrical signals. Photon-electron coupling cross-section is a parameter which relates radiation absorption and emission characteristics. On the other hand, photon-electron coupling cross-section together with photo-ionization energy are fingerprints of deep centres in material. In this work, the wafer fragments of the GaN grown by ammonothermal (AT) technology are studied to reveal the dominant defects introduced by growth procedures and reactor neutron irradiations in a wide range, 1012–1016 cm−2, of fluences. Several defects in the as-grown and irradiated material have been revealed by using the pulsed photo-ionization spectroscopy (PPIS) technique. The PPIS measurements were performed by combining femtosecond (40 fs) and nanosecond (4 ns) laser pulses emitted by optical parametric oscillators (OPO) to clarify the role of electron-phonon coupling. Variations of the operational characteristics of the tentative sensors, made of the AT GaN doped with Mg and Mn, under radiation damage by reactor neutrons have been considered.

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“…These features render optoelectronic devices operational in blue to near-ultraviolet spectral regions. Furthermore, GaN has a high temperature, power, and high frequency [17,18].…”

Section: Introductionmentioning

confidence: 99%

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Jabbar¹,

Fakhri²,

Razzaq³

et al. 2023

Journal of Renewable Materials

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Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5-15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm 2 , and 24% hydrofluoric acid. The substrate exhibited two highly cubic crystalline structures at (200) and (400) orientations and yellow visible band photoluminescence, and homogeneous pores formed over the entire surface. The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically. The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the (002) plane. Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band (374 nm) related to GaN material and in the near-infrared band (730 nm) related to the Psi substrate. The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm. The GaN/Psi surface showed a cauliflower-like morphology, and the built-in voltage decreased from 3.4 to 2.7 eV after deposition. The fabricated GaN/Psi film exhibited good electrical characteristics.

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Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

Cited by 10 publications

References 12 publications

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

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