Annealing effect of vacuum evaporated InSb thin films

Tomisu, Masahiro; Inoue, Narumi; Yasuoka, Yoshizumi

doi:10.1016/0042-207x(95)00208-1

Cited by 20 publications

(12 citation statements)

References 9 publications

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“…These results indicate that the crystallinity is improved in the films deposited at higher substrate temperatures. This is in agreement with the results observed by Masahiro et al [8]. For the as-deposited films, two phases, antimony and stoichiometric InSb were observed.…”

Section: Composition and Structural Analysissupporting

confidence: 94%

“…It has been observed that the crystallite size value increases with the increase of substrate temperature which may be due to decrease in strain value. Such an increase of particle size with increase of substrate temperature has also been reported by Masahiro et al [8].…”

Section: Composition and Structural Analysismentioning

confidence: 52%

“…The dislocation density decreases with the increase of substrate temperature. Since dislocation density and strain are the manifestation of dislocation network in the films, the decrease in dislocation density indicates the formation of high-quality films at higher substrate temperatures [8]. This is possibly because of the fact that when the substrate is kept at higher temperature, the dislocations get more thermal energy and have a higher mobility.…”

Section: Composition and Structural Analysismentioning

confidence: 98%

“…Many reports are available on the growth of InSb thin films using techniques such as molecular beam epitaxy (MBE) [5], metalorganic chemical vapour deposition (MOCVD) [6] and vacuum evaporation [7]. Of all the methods used to prepare InSb films, vacuum evaporation is the very simple and inexpensive technique and can be used for large area deposition [8]. The problem of non-stoichiometry could also be addressed properly by optimizing the conditions of evaporation.…”

Section: Introductionmentioning

confidence: 99%

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Influence of substrate temperature on the properties of vacuum evaporated InSb films

Senthilkumar

Venkatachalam

Viswanathan

et al. 2005

Cryst. Res. Technol.

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Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at different substrate temperatures (303, 373 and 473 K) by vacuum evaporation. The elemental composition of the deposited InSb film was found to be 52.9 % (In) and 47.1 % (Sb). X-ray diffraction studies confirm the polycrystallinity of the films and the films show preferential orientation along the (111) plane. The particle size (D), dislocation density (δ) and strain (ε) were evaluated. The particle size increases with the increase of substrate temperature, which was found to be in the range from 22.36 to 32.59 nm. In Laser Raman study, the presence of longitudinal mode (LO) confirms that the deposited films were having the crystalline nature. Raman peak located at 191.26 cm -1 shift towards the lower frequencies and narrows with increase in deposition temperature. This indicates that the crystallinity is improved in the films deposited at higher substrate temperatures. Hall measurements indicate that the films were p-type, having carrier concentration ≅ 10 16 cm -3and mobility (4 -7.7) ×10 3 cm 2 /Vs. It is observed that the carrier concentration (N) decreases and the Hall mobility (µ) increases with the increase of substrate temperature.

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Section: Composition and Structural Analysissupporting

confidence: 94%

Section: Composition and Structural Analysismentioning

confidence: 52%

Section: Composition and Structural Analysismentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of substrate temperature on the properties of vacuum evaporated InSb films

Senthilkumar

Venkatachalam

Viswanathan

et al. 2005

Cryst. Res. Technol.

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“…Previously, various studies have been done on annealing effect of InSb. [14][15][16] On glass, heat treating using furnace annealing (FA), rapid thermal annealing (RTA) or blue laser diode annealing (BLDA) 17 after forming InSb film using thermal evaporation method, the enhancement of the crystallinity of the InSb film and high carrier mobility can be expected.…”

Section: Introductionmentioning

confidence: 99%

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

et al. 2016

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Fabrication and properties of InSb films with ion-beam sputtering for use in the amplification of magneto-surface-acoustic waves

Obata

Kawahata

Suzuki

et al. 2004

phys. stat. sol. (a)

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The magnetic surface acoustic wave (MSAW) device can be manipulated by an external magnetic field. However the MSAW is attenuated largely at high frequencies above MHz. Therefore, we proposed a MSAW device having a hybrid structure consisting of FeB amorphous thin film/InSb semiconductor thin film/LiNbO 3 substrate. This device is utilized for amplification of surface acoustic waves by the interaction between surface acoustic waves and the carriers in the InSb semiconductor. We prepared (111) InSb thin films by ion beam sputtering. We obtained InSb thin films having Hall mobilities of about 2000 cm 2 /Vs by subsequent annealing. This showed the possibility of MSAW amplification by low voltages.

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Annealing effect of vacuum evaporated InSb thin films

Cited by 20 publications

References 9 publications

Influence of substrate temperature on the properties of vacuum evaporated InSb films

Influence of substrate temperature on the properties of vacuum evaporated InSb films

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

Fabrication and properties of InSb films with ion-beam sputtering for use in the amplification of magneto-surface-acoustic waves

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