Fabrication and properties of InSb films with ion-beam sputtering for use in the amplification of magneto-surface-acoustic waves

Abstract

The magnetic surface acoustic wave (MSAW) device can be manipulated by an external magnetic field. However the MSAW is attenuated largely at high frequencies above MHz. Therefore, we proposed a MSAW device having a hybrid structure consisting of FeB amorphous thin film/InSb semiconductor thin film/LiNbO 3 substrate. This device is utilized for amplification of surface acoustic waves by the interaction between surface acoustic waves and the carriers in the InSb semiconductor. We prepared (111) InSb thin films by ion beam sputtering. We obtained InSb thin films having Hall mobilities of about 2000 cm 2 /Vs by subsequent annealing. This showed the possibility of MSAW amplification by low voltages.

Direct and converse magnetoelectric effects in Metglas/LiNbO3/Metglas trilayers

“…[ [33][34][35]. Even magnetically tuned surface acoustic wave devices were designed and tested in doped LiNbO 3 [ 15,[36][37][38][39] ]. However, as a functional layer in ME laminate structures, it has been considered and/or implemented only in a few studies [ [40][41][42].…”