Anisotype multiheterojunction eutectic composites: The CdTe-GaTe system

Magnetic and metallurgical properties of directionally solidified eutectic Bi/MnBi composites: The effects of annealingDirectional solidification ofa Ge-TiGe 2 eutectic yields an array of aligned TiGe 2 fibers in a Ge matrix. These aligned metallic fibers result in a highly anisotropic material such that the ratio of the resistivities perpendicular and parallel to the rods is typically 10 2 _10 3 at room temperature and even larger at low temperatures. The resistivity of these semiconductor based eutectic composites is examined as a function of the type and concentration of donors. A significant distinction in the resistivity perpendicular to the rods is observed between composites with a ptype and n-type Ge matrix. This difference is analyzed in terms of the depletion layers at the metal-semiconductor junction, as well as the high density of crystalline defects in the Ge created by the two phase solidification and cooling stresses.

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Anisotype multiheterojunction eutectic composites: The CdTe-GaTe system

Abstract: A general introduction is given to the in situ growth of anisotype multiheterojunctions. Structures based on the CdTe-GaTe system are discussed in some detail. Electrical measurements including J-V characteristics and the photovoltaic effect are reported.

Cited by 8 publications

References 7 publications

Growth of Highly-Anisotropic Crystalline Structures

Growth of Highly-Anisotropic Crystalline Structures

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Preparation and electrical properties of a directionally solidified Ge-TiGe2 eutectic

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