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Aguiar, Marina R.; Caram, Rubens; Oliveira, Marcelo Falção de; Kiminami, Cláudio Shyinti

doi:10.1023/a:1004634615701

Cited by 17 publications

(8 citation statements)

References 9 publications

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“…All the films were annealed at 300°C for 20 min in Ar atmosphere. It can be seen that the Sn 2 Se 3 alloy phase separates into SnSe and SnSe 2 , which is supported by Aguiar et al [16]. Moreover, the peaks are suppressed and broadened from the XRD patterns after more Al doping.…”

Section: Resultssupporting

confidence: 67%

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Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Zhu

Zou

et al. 2015

J Mater Sci: Mater Electron

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Phase change behavior in Al x (Sn 2 Se 3 ) 1-x (x = 0.003, 0.010, 0.023) films were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with increasing of Al content. The analysis of X-ray diffraction indicates that the grain size decreases and the crystallization is suppressed by more Al doping. Al 0.023 (Sn 2 Se 3 ) 0.977 has an excellent thermal stability with the crystallization activation energy of 3.79 eV and the failure time is longer than that of Ge 2 Sb 2 Te 5 film. The crystallization speed of Al 0.023 (Sn 2 Se 3 ) 0.977 film is faster than that of GST. The phase transition kinetics of Al 0.023 (Sn 2 Se 3 ) 0.977 films were investigated. The obtained values of Avrami indexes indicate that a one dimensional growth-dominated mechanism is responsible for the amorphous-crystalline transformation of Al 0.023 (Sn 2 Se 3 ) 0.977 film. We conclude that Al 0.023 (Sn 2 Se 3 ) 0.977 film is a good candidate for phasechange random-access memory applications with good thermal stability and high switching speed.

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Section: Resultssupporting

confidence: 67%

“…Thus it is not dependent on the difficulty in nucleation, by which E c is calculated [24,25]. This phenomenon is very similar to the crystallization processes in Sb-rich Si 16 Sb 84 and Ge 15 Sb 85 phase-change films which show good thermal stability as well as fast crystallization speed.…”

Section: Resultsmentioning

confidence: 53%

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Zhu

Zou

et al. 2015

J Mater Sci: Mater Electron

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“…In TEM analyses for the first region to solidify the usual SnSe and SnSe 2 phases [4] were observed, as shown in Fig. 4a and b.…”

Section: Resultsmentioning

confidence: 75%

“…Under controlled growth conditions, as in the case of directional solidification, it is possible to produce an oriented lamellar eutectic microstructure formed by an array of SnSe and SnSe 2 layers [1][2][3][4]. Such a microstructure forms p/n multi-junctions, which makes this material a promising candidate for the fabrication of photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

Microstructure of undercooled SnSe–SnSe2 hypoeutectic alloy

Oliveira

Caram

Kiminami

2004

Journal of Alloys and Compounds

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“…In comparison with many other 2D chalcogenides, the tin selenide system has so far received very little attention. The tin selenides exist primarily in two stoichiometric phases, tin monoselenide (SnSe) and tin diselenide (SnSe 2 ), and are known to display many polytypes that could lead to interesting devices [6][7][8][9][10][11][12]. SnSe, which adopts an orthorhombic layered structure (Pnma, Space Group #62 at room temperature), is reported to be a p-type semiconductor with a narrow band gap (~0.90eV indirect and ~1.30 eV direct) [6,9,13].…”

Section: Introductionmentioning

confidence: 99%

Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

Tracy

Liu

et al. 2016

Journal of Crystal Growth

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Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150°C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn = 3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn > 10:1) gave higher quality, single-phase SnSe 2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011] SnSe //[ ] GaAs , while the diselenide films were consistent with the Space Group , and had the epitaxial growth relationship [ ] SnSe2 //[ ] GaAs .

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Untitled

Cited by 17 publications

References 9 publications

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Microstructure of undercooled SnSe–SnSe2 hypoeutectic alloy

Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

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