Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies

Nsengiyumva, Patrick; Massengill, L.W.; Kauppila, J. S.; Maharrey, J. A.; Harrington, R. C.; Haeffner, T. D.; Ball, D. R.; Alles, Michael L.; Bhuva, B. L.; Holman, W.T.; Zhang, En Xia; Rowe, J. D.; Sternberg, Andrew L.

doi:10.1109/tns.2017.2775234

Cited by 25 publications

(5 citation statements)

References 18 publications

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“…The results in [20] and [22] are not contradictory. They correspond to devices with different geometries (with the available information), in such a way that, in their respective cases, the maximum values match when the ion trajectory crosses the major area of the drain depletion region.…”

Section: Effects Of Track Angular Incidencementioning

confidence: 87%

“…In previous works, the charge collected by a bulk-FinFET device after an ionizing particle hit, has demonstrated a great dependence on the angular incidence of the ion trajectory [20], [22]. But, a priori, contradictory results have been found regarding the influence of the angle on the charge collected by the terminals of active devices.…”

Section: Effects Of Track Angular Incidencementioning

confidence: 99%

“…The spatial and temporal ion track parameters have been selected from [12], with a constant Linear Energy Transfer (LET) along the track, Gaussian spatial distribution, characteristic ion-track radius of the Gaussian function of 10 nm, and for best fit with this technology, the characteristic width, t hi , of the temporal evolution of 0.8 ps has been chosen. The incident angle of the ion has been chosen normal to the surface of silicon, which is the worst-case scenario [20].…”

Section: Simulation Environmentmentioning

confidence: 99%

“…But, a priori, contradictory results have been found regarding the influence of the angle on the charge collected by the terminals of active devices. In [20], the angle of incidence that mostly affects the operation of storage elements (in their case flip flops) is the normal incidence angle of the track to the bulk. On the contrary, in [22] the authors conclude that the largest Multiple Bit Upset (MBU) effect occurs for angles perpendicular to the fin direction.…”

Section: Effects Of Track Angular Incidencementioning

confidence: 99%

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Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

et al. 2022

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This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 3D TCAD simulations have been performed to obtain a detailed map of the sensitivity areas in a full cell 6-T SRAM 22 nm bulk-FinFET process. The influence of the well depth on the charge collected by the drain devices of the SRAM cell has been studied, and it has been concluded that the collected charge can be reduced down to 300% simply by modifying the depth of the well, without affecting the performance of the cell. Different PTS layer depths have been analyzed in order to calculate which value minimizes the impact of the charge generated by an ion during its track along the FinFET body. The simulations carried out allow to conclude that the incorporation of a PTS layer not only reduces the leakage current, but also reduces the amount of charge, delivered by the ion, that reaches the drain region. Simulation results also show that the fraction of the charge generated by the ion impact, which is collected by the drain, mainly depends on the depth of the wells, whereas the PTS layer hardly modifies the collected charge.

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Section: Effects Of Track Angular Incidencementioning

confidence: 87%

Section: Effects Of Track Angular Incidencementioning

confidence: 99%

Section: Simulation Environmentmentioning

confidence: 99%

Section: Effects Of Track Angular Incidencementioning

confidence: 99%

See 2 more Smart Citations

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

et al. 2022

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“…Hence, it is necessary to determine and understand the cases wherein the strongest effects occur. SEU is affected by the incident angle and location of the radiation [17,18]. Therefore, in this study, the effect of these parameters on the SEU in NW-FETs and NS-FETs was analyzed in detail.…”

Section: Introductionmentioning

confidence: 99%

The Analysis of SEU in Nanowire FETs and Nanosheet FETs

Kim

Kang

2021

Electronics

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The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to the incident angle and location of radiation, by using three-dimensional technology computer-aided design tools. The greatest SEU occurred when the particle was incident at 90°, whereas the least occurred at 15°. SEU was significantly affected when the particle was incident on the drain, as compared to when it was incident on the source. The NS-FETs were robust to SEU, unlike the NW-FETs. This phenomenon can be attributed to the difference in the area exposed to radiation, even if the channel widths of these devices were identical.

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An Analytical Model for Deposited Charge of Single Event Transient (SET) in FinFET

Liu,

Cai,

2024

J Electron Test

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Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies

Cited by 25 publications

References 18 publications

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

The Analysis of SEU in Nanowire FETs and Nanosheet FETs

An Analytical Model for Deposited Charge of Single Event Transient (SET) in FinFET

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