The Analysis of SEU in Nanowire FETs and Nanosheet FETs

Kim, Yun-Jae; Kang, Myounggon

doi:10.3390/electronics10070863

Cited by 1 publication

(1 citation statement)

References 19 publications

(19 reference statements)

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“…This reduces the probability of charge collection [20,[22][23][24]. Additionally, structures such as the derived Gate-All-Around (GAA) [21,25] also exhibit excellent radiation resistance. However, these two ideas not only call for very expensive production and cutting-edge technology but they also create new issues: the SOI structure requires additional insulation layer processing, and, due to the floating body effect, the bipolar amplification effect is much stronger than that of planar MOS devices [2].…”

Section: Introductionmentioning

confidence: 99%

A New Type of Si-Based MOSFET for Radiation Reinforcement

Liu,

Zhou,

Zhang

et al. 2024

Micromachines

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This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/μm and 1 pC/μm Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source.

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