Analytical modeling of underlap graded channel field effect transistor as a label-free biosensor

Singh, Khuraijam Nelson; Dutta, Pradip

doi:10.1016/j.spmi.2021.106897

Cited by 7 publications

(5 citation statements)

References 31 publications

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“…The incorporation of a tri-step doping profile enables precise channel engineering, resulting in the enhancement in device performance by increasing the driving current, and mitigating Short Channel Effects as well as body effect. 71,72 It is important to note that graded doping profile-1 (N A1 = 1 × 10 16 cm −3 , N A2 = 1 × 10 15 cm −3 , N A3 = 1 × 10 14 cm −3 ) results in the maximum V th sensitivity and drain current sensitivity. While the I ON /I OFF ratio drifts more in favor of the doping profiles 2 and 4 than the doping profile 1.…”

Section: Vth Th No Biomolecule Thwith Biomoleculesmentioning

confidence: 99%

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Yadav,

Das,

Rewari

2024

ECS J. Solid State Sci. Technol.

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This paper introduces a novel device called the gate all around engineered gallium nitride field effect transistor (GAAE-GANFET), designed specifically for label-free biosensing applications. This innovative gate-all-around engineering in GANFET integrates various device engineering techniques, such as channel engineering, gate engineering, and oxide engineering, to enhance biosensing performance. The channel engineering techniques refer to the use of a gallium nitride channel with a step-graded doping profile, divided into three distinct regions. In contrast, the gate engineering technique refers to the cylindrical split-gate-underlap architecture. The oxide engineering technique involves stacking Al2O3 and HfO2. Moreover, this biosensor incorporates two-sided gate underlap cavities that facilitate the immobilization of biomolecules. These open cavities not only provide structural stability but also simplify the fabrication process to a significant extent. The viability of this biosensor as a label-free biosensor has been evaluated using an antigen and an antibody from the Avian Influenza virus and DNA as the target biomolecules. The proposed analytical model and TCAD simulation results are in excellent agreement, demonstrating the reliability of the proposed device. Additionally, the biosensor's sensitivity, which depends on cavity length, doping concentration, gate metal work function, and temperature variation, has been thoroughly explored.

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Section: Vth Th No Biomolecule Thwith Biomoleculesmentioning

confidence: 99%

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Yadav,

Das,

Rewari

2024

ECS J. Solid State Sci. Technol.

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“…Every biomolecule is characterized with dielectric constant and charge density. Neutral biomolecules such as keratin (K bio = 8) [23], hydroprotein (K bio = 5) [45,46], APTES (K bio = 3.57) [18], ChOx (K bio = 3.3) [47], biotin (K bio = 2.63) [48], protein (K bio = 2.5) [47], streptavidin (K bio = 2.1) [16] and charged biomolecules such as DNA (K bio = 5 and N f = À1e10/cm 2 to À1e12/cm 2 ) which is non-hybridized are considered in this work. Jang et al [49] has reported the size of roughly 5 nm for streptavidin and Kim et al [50] has experimentally demonstrated the entrapping of streptavidin inside the cavity.…”

Section: Biosensing Principle and Simulator Specificationsmentioning

confidence: 99%

“…Incorporating the channel engineering by using a horizontal tri‐step doping profile in channel not only increases the sensitivity but also improves the other characteristics such as improvement in the driving current [38], lowering of the Short Channel Effects and body effect [23]. It can be further seen that graded doping offers a much better sensitivity than non‐graded doping.…”

Section: Device and Simulator Specificationsmentioning

confidence: 99%

“…Use of graded channel can improve the parameters like breakdown voltage, thus increases the operating voltage range [22]. Singh et al [23] has recently proposed the idea of a FET based biosensor with graded channel. The practical applicability of MOSFET structures with triple gate or graded channel has been already experimentally demonstrated in the past.…”

Section: Introductionmentioning

confidence: 99%

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Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, channel potential, drain current and sub threshold swing. The sensitivity variation in the biosensor has been thoroughly studied by varying different device parameters to investigate its biosensing performance. Graded doping in channel offers enhanced sensitivity than a non‐graded doped channel when the doping of the channel is more near the drain end than source end which is due to stronger electric field and gate capacitance. Effect of fill‐in factor for different biomolecules on the sensitivity has been thoroughly discussed. Different analytical results show an excellent agreement with the simulations done on SILVACO ATLAS TCAD simulator.

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“…Using a graded channel instead of a nongraded channel improves the device's performance [47,48]. Recently, Singh et al [49] reported a label-free FET biosensor that uses a graded channel. Although germanium-based biosensors are highly sensitive, they have some flaws and drawbacks.…”

Section: Introductionmentioning

confidence: 99%

Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation

Das,

Rewari,

Kanaujia

et al. 2023

Phys. Scr.

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This paper proposes a novel dielectric modulated step-graded germanium source biotube FET for label-free biosensing applications. Its integrated structure and unique design combine the benefits of the gate stack, germanium source, triple-gate architecture, and a step-graded biotube channel, resulting in superior performance over existing biosensors. A compact two-dimensional analytical model for channel potential, drain current, threshold voltage, and subthreshold swing has been formulated and agrees well with the simulated results. The comprehensive investigation of different device parameters, including doping and bias, offers valuable insights into optimizing the biosensor’s performance. The proposed biosensor exhibits remarkable sensitivity, achieving up to 263 mV and 1495.52 nA for certain biomolecules, which has been validated by a compact analytical model and simulations performed on the SILVACO TCAD simulator. Several parameters are employed to assess the biosensor’s effectiveness: threshold voltage, ION/IOFF ratio, subthreshold swing, off-current, peak trans-conductance, and on-current. Furthermore, the biotube channel design enables lightweight and cost-efficient biosensors, enhancing the biosensor’s practicality. This work also includes an analysis of the effect of temperature on the biosensor’s performance and characteristics, providing insights into practical applications. High sensitivity of the biosensor signifies a significant advancement in biosensing technology, suggesting a wide range of potential applications in biomedical field.

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Analytical modeling of underlap graded channel field effect transistor as a label-free biosensor

Cited by 7 publications

References 31 publications

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Dielectrically-Modulated GANFET Biosensor for Label-Free Detection of DNA and Avian Influenza Virus: Proposal and Modeling

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation

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