Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors on SOI substrates

Marano, I.; d’Alessandro, V.; Rinaldi, N.

doi:10.1016/j.sse.2007.11.012

Cited by 7 publications

(4 citation statements)

References 28 publications

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“…Further details concerning (i) the physical behavior of h x , h y , h z as a function of all technological quantities, (ii) the accuracy of Eqs. (2)-(4), and (iii) the table of the optimized parameter values can be found in [8].…”

Section: Numerical Simulation and Analytical Modelingmentioning

confidence: 99%

Analysis of the thermal behavior of trench-isolated bipolar transistors fabricated on SOI substrates

Marano

d’Alessandro

Rinaldi

2008

EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronic

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The thermal behavior of trench-isolated bipolar transistors fabricated on SOI (Silicon-On-Insulator) substrates is analyzed. Detailed 3-D numerical simulations are performed to investigate the impact of all technological parameters of interest. A new analytical model to evaluate the temperature field is proposed, which is based on the reduction of the domain under analysis to a silicon rectangular parallelepiped with convective boundary conditions at lateral and bottom faces. An extensive comparison with numerical results proves that the model is extremely accurate over the whole range of parameters, and can be adopted for a fast evaluation of the thermal resistance of a trench SOI device as well as of the temperature gradients within the silicon island surrounded by trenches and buried oxide.

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Section: Numerical Simulation and Analytical Modelingmentioning

confidence: 99%

Analysis of the thermal behavior of trench-isolated bipolar transistors fabricated on SOI substrates

Marano

d’Alessandro

Rinaldi

2008

EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronic

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“…While the thermal resistance of a single emitter bipolar transistor can be determined using analytical models [9][10] or device simulation, the thermal coupling associated with multi-finger structures is not amenable to analytical models and requires extensive 3-D electro-thermal simulation. To the best of our knowledge, no published models are available to easily estimate R th of a multi-emitter device.…”

Section: Introductionmentioning

confidence: 99%

Thermal Resistance Model for Multi-finger Trench-Isolated Bipolar Transistors on SOI Substrate

Rani¹,

Kranti²,

Armstrong³

et al. 2009

ECS Trans.

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A simple predictive model to estimate the thermal resistance of a trench isolated multi-finger bipolar device on SOI substrate is proposed. The model shows very good agreement with 3-D electro-thermal simulations over a wide range of device parameters. The simulations have been verified with measurements. The model is virtually independent of critical device parameters such as trench depth, oxide layer thickness and emitter dimensions and serves as a useful tool to predict the thermal resistance of a multi-emitter device reasonably accurately, from the known thermal resistance of the corresponding single-emitter device.

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“…Only a few papers have been published that analyze the thermal behavior of fully-isolated bipolar junction transistors (BJTs) fabricated on conventional silicon substrates [2]- [4]. In all these works, the structure under analysis is comprised of an "island" (also referred to as "tub" or "box") surrounded by insulating trench and buried oxide, and embedded in a silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

“…In [3], an effort is made to analytically describe the thermal response of vertical BJTs with the aid of measurements and numerical simulations. In [4], a parametric analysis of the thermal behavior under steadystate conditions is carried out through an analytical model supported by a finite-element-method (FEM) analysis. However, none of these investigations covers the case of silicon BJTs fabricated in silicon-on-glass (SOG) technology [5], where the low heat-transfer capability of the glass substrate, as well as of all other materials surrounding the silicon island, significantly affects the nature of the heat propagation.…”

Section: Introductionmentioning

confidence: 99%

Thermal design of fully-isolated bipolar transistors

Russo

Spina

d’Alessandro

et al. 2008

2008 14th International Workshop on Thermal Inveatigation of ICs and Systems

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The impact of layout parameters on the thermal behavior of BJTs with full dielectric isolation is extensively analyzed by measurements and numerical simulations. The influence of the aspect ratio of the emitter stripe as well as the consequences of the device scaling are investigated from a thermal viewpoint. It is shown that the metallization design plays a key role in the thermal response of fully-isolated devices. As a conclusion, plain guidelines are provided to optimize the thermal design.

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Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors on SOI substrates

Cited by 7 publications

References 28 publications

Analysis of the thermal behavior of trench-isolated bipolar transistors fabricated on SOI substrates

Analysis of the thermal behavior of trench-isolated bipolar transistors fabricated on SOI substrates

Thermal Resistance Model for Multi-finger Trench-Isolated Bipolar Transistors on SOI Substrate

Thermal design of fully-isolated bipolar transistors

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