Abstract:The thermal behavior of trench-isolated bipolar transistors fabricated on SOI (Silicon-On-Insulator) substrates is analyzed. Detailed 3-D numerical simulations are performed to investigate the impact of all technological parameters of interest. A new analytical model to evaluate the temperature field is proposed, which is based on the reduction of the domain under analysis to a silicon rectangular parallelepiped with convective boundary conditions at lateral and bottom faces. An extensive comparison with numer… Show more
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