Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation

Abstract

This paper presents an analytical model to determine the threshold voltage in Ultrathin Body and Buried Oxide Fully Depleted Silicon on Insulator (UTBB FD SOI) MOSFETs operating in dynamic threshold (DT) voltage modes. The analytical model is based on implementing the quantum confinement effect and the DT restriction. The results show that the proposed analytical model in its simplicity provides a good agreement to the experimental data.

Effect of Substrate Bias and Temperature Variation in the Capacitive Coupling of SOI UTBB MOSFETs

“…As UTBB devices present smaller silicon and buried oxides thicknesses than conventional FD SOI transistors, the potential at the third interface should be accounted for correct determination of ΦS2, which can be calculated through the solution of the following expressions [20][21][22]…”

“…where Q2 is the inversion or accumulation charge in the second interface, NAsub is the doping concentration of the ground plane and VFB3 is the flatband voltage between the buried oxide and the substrate [21].…”