Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale nand Flash Memories

Compagnoni, Christian Monzio; Gusmeroli, R.; Spinelli, A.S.; Visconti, A.

doi:10.1109/ted.2008.2003332

Cited by 65 publications

(51 citation statements)

References 14 publications

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“…by Fowler-Nordheim tunneling [2], [3], the injection spread ¡ÎÌ on CHE-programmed NOR devices displays a squareroot dependence on ¡Î Ì for small Î Ì shifts, revealing a nearly poissonian behavior for the electron injection process.…”

Section: Resultsmentioning

confidence: 99%

“…For large ¡Î Ì values, instead, ¡ÎÌ tends to saturate, clearly highlighting the sub-poissonian nature of the electron injection process that is due to the reduction of the tunnel oxide vertical field following each electron storage into the FG [1]- [3]. Note that ¡ÎÌ does not depend on the bit-line voltage used for CHE neither in the poissonian nor in the subpoissonian regime.…”

Section: Resultsmentioning

confidence: 99%

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Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories

Compagnoni

Chiavarone²,

Calabrese

et al. 2009

2009 IEEE International Reliability Physics Symposium

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This work investigates for the first time chargegranularity effects during channel hot-electron programming of NOR Flash memories, comparing the granular electron injection and the random telegraph noise limitations to the accuracy of the programming algorithm. The spread of the threshold voltage shift that is determined by the electron injection statistics is studied as a function of the channel hot-electron programming conditions, explaining the results by an analytical model accounting for the sub-poissonian nature of the electron transfer to the floating gate. The scaling trend of the injection statistical spread is then investigated on NOR technologies ranging from ½ ¼ to nm and its contribution to the width of the threshold voltage distribution in presence of a program verify level is separated from that given by random telegraph noise.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories

Compagnoni

Chiavarone²,

Calabrese

et al. 2009

2009 IEEE International Reliability Physics Symposium

Self Cite

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“…In the ideal case, the algorithm is expected to result in a V T distribution exceeding the program-verify level PV by an amount at most equal to the ISPP step (dashed lines in Figure 15). In reality, the distributions are widened by the program noise (not discussed here, see [158,159]) and by RTN and display the characteristic exponential tails. Note that no cell can have V T values below the program-verify level, as the algorithm would apply an additional step to them.…”

Section: Modelsmentioning

confidence: 99%

“…A comparative analysis of the impact of charge detrapping on the width of the V T distribution after cycling and bake was reported in [239] and shown in Figure 28, normalized to the ISPP step V s . The two bottom-most contributions are related to the time-0 placement of the V T distribution-namely, the ISPP step V s and the fluctuation in the number of injected electrons per step [158,159,240]-and are not discussed here. The remaining part is made up of a native RTN contribution plus the additional terms induced by cycling.…”

Section: Effect On V T Distribution After Cyclingmentioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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“…[1][2][3][4][5][6][7][8] RTN is induced by capture/emission of single electron in a gate oxide trap, which is generated by fabrication process or program/erase cycling stress. Therefore, RTN results in threshold voltage (Vth) fluctuation as shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory

Toshihiro¹,

Miyaji²

2015

Jpn. J. Appl. Phys.

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The dependence of spatial and statistical distribution of random telegraph noise (RTN) in a 30 nm NAND flash memory on channel doping concentration NA and cell program state Vth is comprehensively investigated using three-dimensional Monte Carlo device simulation considering random dopant fluctuation (RDF). It is found that single trap RTN amplitude Vth is larger at the center of the channel region in the NAND flash memory, which is closer to the jellium (uniform) doping results since NA is relatively low to suppress junction leakage current. In addition, Vth peak at the center of the channel decreases in the higher Vth state due to the current concentration at the shallow trench isolation (STI) edges induced by the high vertical electrical field through the fringing capacitance between the channel and control gate. In such cases, Vth distribution slope  cannot be determined by only considering RDF and single trap.

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Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale nand Flash Memories

Cited by 65 publications

References 14 publications

Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories

Granular electron injection and random telegraph noise impact on the programming accuracy of NOR Flash memories

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory

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