We study the effects of exposure to accelerated neu-tron beams of Floating Gate \ud
(FG) Flash memories with NOR architecture. Error rates as well as threshold voltage shifts \ud
are examined and mechanisms are discussed. A comparison with NAND Flash memories, \ud
with both multi-level and single-level cell architecture, is performed. In addition to prompt \ud
effects, retention of irradiated cells is analyzed for several months after irradiation. Thanks to \ud
tail distributions, we can assess possible rare events
This work investigates for the first time chargegranularity effects during channel hot-electron programming of NOR Flash memories, comparing the granular electron injection and the random telegraph noise limitations to the accuracy of the programming algorithm. The spread of the threshold voltage shift that is determined by the electron injection statistics is studied as a function of the channel hot-electron programming conditions, explaining the results by an analytical model accounting for the sub-poissonian nature of the electron transfer to the floating gate. The scaling trend of the injection statistical spread is then investigated on NOR technologies ranging from ½ ¼ to nm and its contribution to the width of the threshold voltage distribution in presence of a program verify level is separated from that given by random telegraph noise.
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