Sensitive Volume and Extreme Shifts in Floating Gate Cells Irradiated with Heavy Ions

Bagatin, M.; Gerardin, Simone; Paccagnella, A.; Visconti, A.; Bonanomi, M.; Chiavarone, Luca; Calabrese, Marcello; Ferlet-Cavrois, V.

doi:10.1109/tns.2015.2498403

Cited by 5 publications

(4 citation statements)

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“…Another interesting aspect that was recently studied was the evaluation of extreme events after irradiation with highly energetic heavy ions [67]. This work shows the importance of measuring a large number of cells to have a reliable estimation of the maximum heavy-ion induced V th shifts, the more so in advanced devices where cell-to-cell variability and energy straggling can be very pronounced.…”

Section: Single Event Upsets In Fg Cellsmentioning

confidence: 98%

“…This work shows the importance of measuring a large number of cells to have a reliable estimation of the maximum heavy-ion induced V th shifts, the more so in advanced devices where cell-to-cell variability and energy straggling can be very pronounced. In [67], the measurement of extreme V th values in a large number of tested sectors in NOR memories highlighted that extreme V th shifts can be considerably larger than the average ones. Extreme V th values were shown to follow a Gumbel distribution, giving relevant indications in case threshold voltage shifts are experimentally available only on a limited number of sectors and worst-case values of extreme shifts must be assessed using extreme value theory.…”

Section: Single Event Upsets In Fg Cellsmentioning

confidence: 99%

“…Extreme V th values were shown to follow a Gumbel distribution, giving relevant indications in case threshold voltage shifts are experimentally available only on a limited number of sectors and worst-case values of extreme shifts must be assessed using extreme value theory. Figure 17 shows an example of distributions of extreme V th tails in a 45-nm NOR flash memory exposed to high-energy ions (523-MeV Iron), and average V th distributions are compared with measured and simulated extreme V th distributions [67].…”

Section: Single Event Upsets In Fg Cellsmentioning

confidence: 99%

“…The PB cross section is Figure V distributions for programmed cells in one whole sector for NOR programmed cells after irradiation with Fe at normal incidence, compared with experimental and simulated extreme V th distributions in 10 4 sectors after irradiation with Fe at normal incidence. Adapted from [67].…”

Section: Single Event Upsets In the Control Circuitrymentioning

confidence: 99%

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Space and terrestrial radiation effects in flash memories

Bagatin

Gerardin

Paccagnella

2017

Semicond. Sci. Technol.

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We present a comprehensive review of the effects of ionizing radiation on advanced flash memories. The effects of ionizing radiation as well as the mechanisms underlying the observed phenomena are thoroughly discussed on both floating gate cells and the complex control circuitry. The covered effects are relevant for all floating-gate based flash memories that require very high levels of reliability, from critical applications at the terrestrial level to radiation-harsh environments, such as space, nuclear power plants, and high-energy physics experiments.

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Section: Single Event Upsets In Fg Cellsmentioning

confidence: 98%

Section: Single Event Upsets In Fg Cellsmentioning

confidence: 99%

Section: Single Event Upsets In Fg Cellsmentioning

confidence: 99%

Section: Single Event Upsets In the Control Circuitrymentioning

confidence: 99%

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