Analysis of tandem III&amp;#x2013;V/SiGe devices grown on Si

Schmieder, Kenneth J.; Gerger, Andrew; Diaz, Michèle T.; Pulwin, Ziggy; Ebert, Chris; Lochtefeld, A.; Opila, R. L.; Barnett, Allen

doi:10.1109/pvsc.2012.6317764

Cited by 29 publications

(28 citation statements)

References 14 publications

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“…0.86 eV indirect bandgap). This final composition was chosen because previous calculations [5] predicted that this tandem bandgap combination was near the current match between GaAsP and SiGe and therefore the optimized AM1.5G architecture for this material combination. The grade was accomplished in under 5 μm of epitaxy, thus allowing for further III-V growth without reaching the cracking limit [17].…”

Section: Sige On Simentioning

confidence: 99%

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GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance

Schmieder

Gerger

Diaz³

et al. 2015

Materials Science in Semiconductor Processing

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Section: Sige On Simentioning

confidence: 99%

“…Previously we presented calculations for a modified Shockley-Queisser [4] evaluation of III-V/SiGe lattice-matched tandem solar cells [5]. We identified an ideal III-V top subcell ternary material, gallium arsenide phosphide (GaAsP), and provided a direction for initial experimental work.…”

Section: Introductionmentioning

confidence: 99%

GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance

Schmieder

Gerger

Diaz³

et al. 2015

Materials Science in Semiconductor Processing

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“…Both GaAsP and SiGe materials can be compositionally tuned to span a broad range of bandgaps opening possibility for multijunction cells with internal lattice-matching between GaAsP and SiGe. While the unconstrained two-terminal 2J ideal efficiency is 41.7% under AM1.5g for a bandgap combination of 1.73/ 1.13 eV, the predicted efficiency for 2J GaAsP/SiGe cell is 39.4% (AM1.5g) under lattice-matched conditions (with bandgaps of 1.54/0.84 eV) (Schmieder et al 2012). Diaz et al (2014) improvement in the higher wavelength regime.…”

Section: Si X Ge 1-x Graded Buffersmentioning

confidence: 92%

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

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“…Fig. 3 shows the bandgap-V OC offset (W OC ) of various III-V devices with respect to TDD [23]. This also illustrates the importance of lattice matching as a lattice matched structure will limit any further formation of threading dislocations.…”

Section: Tdd Improvementmentioning

confidence: 94%

“…Reported W OC vs TDD data from literature showing the correlation between the material quality and the device performance[23].…”

mentioning

confidence: 99%

Tandem GaAsP/SiGe on Si solar cells

Diaz¹,

Wang²,

Li³

et al. 2015

Solar Energy Materials and Solar Cells

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Analysis of tandem III–V/SiGe devices grown on Si

Cited by 29 publications

References 14 publications

GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance

GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Tandem GaAsP/SiGe on Si solar cells

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