GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance

Schmieder, Kenneth J.; Gerger, Andrew; Diaz, Michèle T.; Pulwin, Ziggy; Curtin, M.; Wang, Li; Ebert, Chris; Lochtefeld, A.; Opila, R. L.; Barnett, Allen

doi:10.1016/j.mssp.2015.05.058

Cited by 13 publications

(14 citation statements)

References 26 publications

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“…The nþ/p GaAsP top cell is targeted to be lattice-matched at growth temperature with the SiGe layers below and current-matching with the SiGe bottom cell [21]. The Te doped GaAsP contact layer has a targeted dopant density of 2 Â 10 20 cm À 3 for reduced contact resistance.…”

Section: Structure Designmentioning

confidence: 99%

“…The pþ/nþ tunnel-junction (TJ) for this tandem structure lies within the III-V layers with a targeted dopant density of 2 Â 10 19 cm À 3 and 2 Â 10 20 cm À 3 , respectively. With evidence that GaInP provides better nucleation than GaAsP [21], a 200 nm thick GaInP nucleation layer is used between the SiGe growth layers and the subsequent III-V growth layers. The n/p SiGe bottom cell targets a bandgap of 0.86 eV with a germanium concentration of 82% to match the SiGe graded buffer final Ge concentration.…”

Section: Structure Designmentioning

confidence: 99%

“…As the lattice constant for GaAsP varies from 5.45 to 5.65 depending on composition, this work targets a lattice constant of 5.61 with a 20% P composition to match the lattice of the 82% Ge SiGe bottom cell [22]. A TDD of 6.2 Â 10 6 cm À 2 has been previously reported for III-V layers on SiGe [21]. The simplified device structure details are shown in Fig.…”

Section: Materials Growthmentioning

confidence: 99%

“…4 [21] whereas more recent improvements in material quality have led to a TDD of 2.8 Â 10 6 cm À 2 in the III-V layers as shown in Fig. 5 and measured by electron beam-induced current (EBIC) [24].…”

Section: Tdd Improvementmentioning

confidence: 99%

See 3 more Smart Citations

Tandem GaAsP/SiGe on Si solar cells

Diaz¹,

Wang²,

Li³

et al. 2015

Solar Energy Materials and Solar Cells

Self Cite

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Section: Structure Designmentioning

confidence: 99%

Section: Structure Designmentioning

confidence: 99%

Section: Materials Growthmentioning

confidence: 99%

Section: Tdd Improvementmentioning

confidence: 99%

See 2 more Smart Citations

Tandem GaAsP/SiGe on Si solar cells

Diaz¹,

Wang²,

Li³

et al. 2015

Solar Energy Materials and Solar Cells

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“…Crystalline silicon solar cell has continued dominating the solar energy market [1]. Yet, III-V solar cell has the highest conversion efficiency in the world [2]. However, this device has high cost, making it diffcult to command the solar cell market.…”

Section: Introductionmentioning

confidence: 99%

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Kuo

Hsieh

et al. 2016

International Journal of Photoenergy

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We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperature (180°C). The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD) and spectroscopy ellipsometry (SE). The full width at half maximum (FWHM) of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM) to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

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Cost benefits of Si1−xGex for III-V growth

Nayfeh¹,

Hadi²

2023

Silicon-Germanium Alloys for Photovoltaic Applications

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GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance

Cited by 13 publications

References 26 publications

Tandem GaAsP/SiGe on Si solar cells

Tandem GaAsP/SiGe on Si solar cells

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Cost benefits of Si1−xGex for III-V growth

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