2005 European Conference on Power Electronics and Applications 2005
DOI: 10.1109/epe.2005.219304
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Analysis of premature breakdown in high-power devices using IBIC microscopy

M. Zmeck
1
,
L.J. Balk
2
,
A. Pugatschow
3
et al.
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Cited by 4 publications
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Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations

Pugatschow1,
Heiderhoff2,
Balk3
2007
Microelectronics Reliability
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Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations

Pugatschow1,
Heiderhoff2,
Balk3
2007
Microelectronics Reliability
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3
0
1
0
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Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

Siemieniec1,
Pugatschow2,
Geissler3
et al. 2008
9th International Seminar on Power Semiconductors (ISPS 2008)
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In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes

Léonard
1
,
Dickerson
2
,
King
3
et al. 2016
IEEE Electron Device Lett.
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