Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations

Pugatschow, A.; Heiderhoff, R.; Balk, L.J.

doi:10.1016/j.microrel.2007.07.003

Cited by 3 publications

(3 citation statements)

References 14 publications

(11 reference statements)

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“…According to the SIMS results, they may correspond to local changes in the incorporation of silicon or background impurities such as oxygen (O) or carbon (C) or to an agglomeration of them since they all exist together in the probed epilayer thickness (5 µm). Further analyses such as EBIC [29,30] are needed to determine the exact nature of the defects that create this kind of inhomogeneity. Moreover, when considering both the A 1 (LO) intensity and the position maps of frame 1 and 2 (Figures 5 and 6), we observe peculiar patches (highlighted in black squares) in the active area of the 200 µm diodes.…”

Section: Study Of the A 1 (Lo) Peak Behaviormentioning

confidence: 99%

Section: Study Of the A 1 (Lo) Peak Behaviormentioning

confidence: 99%

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Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

et al. 2023

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In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effects of physical parameters, for example structural defects and doping level inhomogeneity, on the diode electrical performances. Evidence of dislocations in the diode epilayer was spotted thanks to the CL measurements. Then, using 2D mappings of the E2h and A1 (LO) Raman modes, dislocations and other peculiar structural defects were observed. The I-V measurements of the diodes revealed a significant increase in the leakage current with applied reverse bias up to 200 V. The combination of physical and electrical characterization methods indicated that the electrical leakage in the reverse biased diodes seems more correlated with short range non-uniformities of the effective doping than with strain fluctuation induced by dislocations.

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Section: Study Of the A 1 (Lo) Peak Behaviormentioning

confidence: 99%

Section: Study Of the A 1 (Lo) Peak Behaviormentioning

confidence: 99%

Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

et al. 2023

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“…In order to obtain transient information from the low signal-to-background ratio, characterization methods incorporating filtering in both time and frequency domain, and signal separation respectively, as well as averaging recovery techniques are used (Pugatschow et al 2007a). The setup is illustrated in Figure 6.…”

Section: Quantitative Determination Of Electric Field Strengths Withimentioning

confidence: 99%

Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the SEM

2008

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Although electron beam-induced current (EBIC) technique was invented in the seventies, it is still a powerful technique for failure analysis and reliability investigations of modern materials and devices. Time-resolved and stroboscopic microanalyses using sampling Fourier components decomposed by modulated charge carrier excitation are introduced. Quantitative determination of electric field strengths within dynamically operated devices in the scanning electron microscope (SEM) will be demonstrated. This technique allows investigations of diffusion and drift processes and of variations of electric field distributions inside active devices.

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