In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes

Léonard, François; Dickerson, Jeramy Ray; King, Michael Patrick; Armstrong, Andrew M.; Fischer, Arthur J.; Allerman, Andrew A.; Kaplar, Robert; Talin, A. Alec

doi:10.1109/led.2016.2561838

Cited by 2 publications

(1 citation statement)

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“…ET is critical for high voltage power devices because it can alleviate the electric field crowding effect at the device edge and prevent the devices from premature breakdown [30]. Different ET techniques have been successfully incorporated in GaN and SiC p-n power diodes such as mesa [31][32][33][34][35][36][37][38][39][40][41], ion implantation [31,32,42,43], guard rings [32,40,41,[44][45][46], plasma-based ET [31,47,48], and field plates [31,32,49].…”

Section: Introductionmentioning

confidence: 99%

Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination

Mudiyanselage

Wang

2022

IEEE J. Electron Devices Soc.

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Breakdown capability of β-Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With 5 μm β-Ga2O3 drift layer, the ideal breakdown voltage (BV) of the heterojunction was 1.37 kV, while the BV of the reference device without effective mesa edge termination decreased dramatically to 300 V due to the electric field crowding at the device edge. Four mesa ET structures were investigated to mitigate the electric field crowding at the junction edge, including beveled mesa, step mesa, deeply etched mesa, and p-doped guard ring. Without effective ET, the peak electric field at the junction edge was ~ 4.2 MV/cm at −300 V. By incorporating these ET techniques, the peak electric fields were reduced significantly to 0.73 MV/cm. Ideal BV of 1.37 kV was achievable using deeply etched mesa and guard ring ETs. The beveled mesa realized >80% of the ideal BV, while step mesa ET was less effective in alleviating the electric field crowding and only offered ~ 40% of the ideal BV. The device BV can be further scaled by varying β-Ga2O3 drift layer thickness. This work can serve as an important reference and guideline for developing high power high voltage β-Ga2O3 based bipolar power devices.

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