Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN PIN Diodes

Collins, Kimberly; King, Michael Patrick; Dickerson, Jeramy Ray; Vizkelethy, György; Armstrong, Andrew M.; Fischer, Arthur J.; Allerman, Andrew A.; Kaplar, Robert; Aktaş, Özgür; Kizilyalli, I.C.; Talin, A. Alec; Léonard, François

doi:10.1109/led.2017.2708703

Cited by 7 publications

(2 citation statements)

References 19 publications

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“…Zhang et al [4,5] studied 1.8 MeV proton irradiation on p-type GaN and n-type GaN Schottky diodes with 1.1× 10 13 p cm −2 and found that the radiation introduced traps with activation energies of E V +1.02 eV, E C -0.13 eV and 0.16 eV. A 55% decrease in hole diffusion length was found [6] for Schottky diodes after irradiation with 2.5 MeV protons at a fluence of 4 ×10 13 p cm −2 . Meanwhile, the results of high-energy proton irradiation showed that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.…”

Section: Introductionmentioning

confidence: 99%

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Cao

Tao³

et al. 2023

Phys. Scr.

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The paper reports on the degradation of InGaN/GaN Blue LED submitted to proton irradiation at 80 MeV and various fluences (4×1013 p/cm2 and 1×1014 p/cm2). After irradiation, we found a decrease in light output power and the external quantum efficiency with fluence. Photoluminescence (PL) measurements exhibited that the peak position at 400, 447 and 568 nm remained unchanged, only the peak intensity decreased. The intensity of the blue emission reduced by 75%, indicating that the active region degraded seriously; the intensity from InxGa1-xN (x=0.11) reduced more than two times in comparison with the blue emission, implying that proton irradiation affected InxGa1-xN more seriously than InGaN/GaN MQWs. The degradation of LED is ascribed to the increase in the defect-related Shockley–Read–Hall recombination after 80 MeV proton irradiation with higher fluence.

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Section: Introductionmentioning

confidence: 99%

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Cao

Tao³

et al. 2023

Phys. Scr.

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“…One of the major missions is to increase the breakdown voltage for GaN‐based PIN diodes, and for that purpose, different design proposals have been suggested. First, the breakdown voltage can be increased if the electric field in the drift layer can be homogenized, e.g., by using field plates, field rings, and merged junctions that are also reversely biased when the device is in the blocking mode . Second, the enhanced breakdown voltage is possible by passivating the surface imperfections .…”

Section: Introductionmentioning

confidence: 99%

Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes

Hou

Chen

Jia

et al. 2019

Physica Status Solidi (a)

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This study proposes to increase the breakdown voltage for GaN‐based PIN diodes using the polarization effect, such that a thin AlGaN layer is inserted into the drift layer to modulate the electric field profiles, and by properly designing the device architecture, the electric field in the drift layer can be remarkably reduced by the polarization effect, and this enables the enhancement of the breakdown voltage. The study further investigates the parametric sensitivity of the breakdown voltage for the proposed GaN‐based PIN diodes to different device structures with various drift layer thicknesses. Moreover, it is found that the position of the inserted AlGaN thin layer is also important in affecting the breakdown voltage, such that the AlGaN insertion layer reduces the electric field with the maximum intensity in the drift layer.

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Deposition of ZnO and Gd2O3 by co-sputtering to enable ZnO-Gd2O3 based PIN junction diodes

Lopez-Lazcano

Martínez-Falomir

Sánchez

2020

Materials Science in Semiconductor Processing

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Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN PIN Diodes

Cited by 7 publications

References 19 publications

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes

Deposition of ZnO and Gd2O3 by co-sputtering to enable ZnO-Gd2O3 based PIN junction diodes

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