Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes

Abstract

This study proposes to increase the breakdown voltage for GaN‐based PIN diodes using the polarization effect, such that a thin AlGaN layer is inserted into the drift layer to modulate the electric field profiles, and by properly designing the device architecture, the electric field in the drift layer can be remarkably reduced by the polarization effect, and this enables the enhancement of the breakdown voltage. The study further investigates the parametric sensitivity of the breakdown voltage for the proposed GaN‐based PIN diodes to different device structures with various drift layer thicknesses. Moreover, it is found that the position of the inserted AlGaN thin layer is also important in affecting the breakdown voltage, such that the AlGaN insertion layer reduces the electric field with the maximum intensity in the drift layer.

Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes

“…[4][5][6] Hence, GaN-based power devices have great potential for use in electric vehicles, data centers, AC/DC motors and power grids. [7][8][9] To meet these requirements, different types of GaN-based power devices have been proposed and fabricated, such as high-electron-mobility transistors, 10) PIN diodes 11) and Schottky barrier diodes (SBDs). 12) Among these devices, vertical SBDs can achieve a high breakdown voltage (BV) and possess high current density.…”

A novel design of a silicon PIN diode for increasing the breakdown voltage

“…Another research indicates a GaN‐based PIN diode using the polarization effect. The electric field in the drift layer is reduced which leads to the enhancement of the breakdown voltage [10]. In another structure, a fluorine‐implanted termination is used for the vertical GaN PIN diodes to suppress the electric field crowding at the junction edge for a higher breakdown voltage.…”