Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

Siemieniec, Ralf; Pugatschow, A.; Geissler, C.; Schulze, Hans‐Joachim; Niedernostheide, F.‐J.; Heiderhoff, R.; Balk, L.J.

doi:10.1049/ic:20080194

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…Highly sensitive quantitative characterizations are possible in this region equally described by Donolato (1977) for static EBIC measurements. By means of this technique premature breakdown locations can be found within steady-state DUT as illustrated in Figure 5 ( Siemieniec et al 2008).…”

Section: Quantitative Determination Of Electric Field Strengths Withimentioning

confidence: 99%

Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the SEM

2008

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Although electron beam-induced current (EBIC) technique was invented in the seventies, it is still a powerful technique for failure analysis and reliability investigations of modern materials and devices. Time-resolved and stroboscopic microanalyses using sampling Fourier components decomposed by modulated charge carrier excitation are introduced. Quantitative determination of electric field strengths within dynamically operated devices in the scanning electron microscope (SEM) will be demonstrated. This technique allows investigations of diffusion and drift processes and of variations of electric field distributions inside active devices.

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Section: Quantitative Determination Of Electric Field Strengths Withimentioning

confidence: 99%

Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the SEM

2008

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“…Considering linear Electrical field distributions within a statically biased power diode with a guard ring in dependence on applied reverse bias voltages. Detection of premature breakdown locations in an edge termination structure of a MOSFET device by EBIC [11]. relationship between EBIC amplitude and electric field, the acquired maps can be correlated to E-field strengths.…”

Section: Determination Of Electric Field Strengths By Spectral Ebmentioning

confidence: 99%

Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations

Pugatschow

Heiderhoff

Balk

2008

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

Vizkelethy¹,

King²,

Aktaş

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

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Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

Cited by 4 publications

References 11 publications

Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the SEM

Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the SEM

Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations

Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

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