Analysis of GaN HEMTs Switching Transients Using Compact Model

Abstract

This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact model to predict devices' pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gatelag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element technology computeraided design simulations. The original aim of this exercise is to develop a fast (near-real-time) model which can predict dynamic behavior of single and multiple power GaN HEMTs used for the switching transients of GaN power devices at circuit level.

Development of Vertical GaN FETs for Bi-directional Battery Charging

“…The developed model is utilized to predict and improve the electrical performance of a fully vertical device including current levels, threshold voltage, blocking voltage capability and specific onresistance. 1.5x10 6 Simulations suggest that high p-GaN doping leads to further improvement in reverse characteristics of the p-body diode. However, this could be compromised by the challenging activation of Mg dopants for p-type conductivity in GaN.…”

“…Gallium Nitride (GaN) lateral devices [1][2][3][4][5][6][7][8][9][10] have been proliferating the power electronics industry. For power conversion applications, GaN vertical devices with reduced chip area are preferred over lateral GaN HEMT devices since blocking voltage can be scaled independently of the chip area and high value threshold voltages can be achieved.…”

The X-Hall Sensor: Toward Integrated Broadband Current Sensing

“…In the X-Hall architecture, the active region is octagonally shaped (Fig. 1-b) and accessible by a total of 8 contacts: 4 large contacts (B, T, L, R) used to bias the probe, and 4 small contacts (1,2,3,4) used to sense the Hall voltage. In contrast to spun Hall sensor and due to the specific geometrical shape, the contacts of the X-Hall probe are dedicated to a single purpose (either biasing or sensing), so they can be optimized according to their specific function.…”

“…M. Crescentini, G. P. Gibiino, A. Romani, M. Tartagni and P. A. Traverso are with the Department of Electrical, Electronic and Information Engineering (DEI) "G. Marconi", Bologna and Cesena Campuses, University of Bologna, power devices [1], [2], which are able to operate at high frequencies and high power rates, and by the emerging of very fast response (VFR) applications, such as dynamic voltage scaling in microprocessors [3], [4] and high-frequency AC inverters [5]. In VFR applications, the power converter must be able to change the output voltage in the microsecond scale and beyond, requiring voltage and current measurements with very fine time resolutions.…”

An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction

“…Parameter determination: carrier-velocity saturation, channel length modulation and self-heating ADS Yigletu [22] 2013 Physics Measurement of 2DEG charge density ADS Waldron [23] 2013 Semi-Physics Static and dynamic characteristics SPICE Hoffmann [24] 2014 Semi-physics Electrical and RC thermal model SPICE Huang [25] 2014 Behavioural Capacitance models Unspecified Mantooth [26] 2015 -Review -…”