“…Generally well-known dominant failure mechanisms in NAND flash memory are detrapping [5,8,9], interface trap (N it ) recovery [10,11], and trap-assisted tunneling (TAT) [5,12,13]. We previously introduced a technique to separate the dominant mechanisms in NAND flash memory [14][15][16][17][18][19][20]. Each mechanism follows the Arrhenius law well (constant E a ), which means that each has its own activation energy (E a ) [14][15][16][17][18][19].…”