2014 44th European Solid State Device Research Conference (ESSDERC) 2014
DOI: 10.1109/essderc.2014.6948757
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Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory

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Cited by 13 publications
(9 citation statements)
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“…To study the mechanisms of re-program in 3D NAND, the stretched exponential function is used to model charge loss mechanisms [14], [15], [18]- [22]. As mentioned above, only two main charge loss components in IVS are considered in this work.…”
Section: Mechanisms Of Re-program Scheme In 3d Nandmentioning
confidence: 99%
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“…To study the mechanisms of re-program in 3D NAND, the stretched exponential function is used to model charge loss mechanisms [14], [15], [18]- [22]. As mentioned above, only two main charge loss components in IVS are considered in this work.…”
Section: Mechanisms Of Re-program Scheme In 3d Nandmentioning
confidence: 99%
“…As mentioned above, only two main charge loss components in IVS are considered in this work. Thus, the overall V th shift can be expressed and modeled as the sum of behavior of each mechanism [14], [15], [18]- [22]:…”
Section: Mechanisms Of Re-program Scheme In 3d Nandmentioning
confidence: 99%
“…Generally well-known dominant failure mechanisms in NAND flash memory are detrapping [5,8,9], interface trap (N it ) recovery [10,11], and trap-assisted tunneling (TAT) [5,12,13]. We previously introduced a technique to separate the dominant mechanisms in NAND flash memory [14][15][16][17][18][19][20]. Each mechanism follows the Arrhenius law well (constant E a ), which means that each has its own activation energy (E a ) [14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…We previously introduced a technique to separate the dominant mechanisms in NAND flash memory [14][15][16][17][18][19][20]. Each mechanism follows the Arrhenius law well (constant E a ), which means that each has its own activation energy (E a ) [14][15][16][17][18][19]. However, the correlation between E aa and each E a could not be found out.…”
Section: Introductionmentioning
confidence: 99%
“…A similar breakdown of the distribution width was presented in [241], without accounting for detrapping. Other studies also identified charge detrapping as the dominant error source in highly-cycled NAND samples [242]. To overcome this limitation, several solutions have been proposed, including a dummy read [243] or a moving reference [244] scheme and a self-healing approach [245], where a built-in heater in the proximity of the tunnel oxide is used to accelerate damage recovery and prolong the endurance.…”
Section: Effect On V T Distribution After Cyclingmentioning
confidence: 99%