Analysis and scaling of Kelvin resistors for extraction of specific contact resistivity

Specific contact resistance measurements of metal-semiconductor junctions

“…Future research will focus on a model with a 2D current distribution for the realized structures. The results will be compared also with different measurement techniques like Kelvin CrossBridge Resistor (KCBR) [7,8].…”

Identification of semiconductor contact resistivity

“…r In s >'-■ This formula is based on a simple argument using Ohm's law (see, e.g., [4,5] for details). Computer simulations of this problem are also given in [5], In this section we study the quantitative behavior of this extracted contact resistivity pce in terms of the true resistivity pc as given by (3).…”

“…Computer simulations of this problem are also given in [5], In this section we study the quantitative behavior of this extracted contact resistivity pce in terms of the true resistivity pc as given by (3).…”

“…1IIVII// (fl) < l|V^||L2(n) + ||^||L2 (5) for all (f> e //'(Q), where C, is independent of 0. For a proof of the Poincare inequality as used here, see [9] for the case S = Q.…”

Numerical methods for piecewise constant Robin coefficient

“…For example, in corrosion detection [12,17,23,24], p represents the corrosion damage profile on a non-accessible boundary, and u 0 is the electrostatic measurement made on an accessible boundary. In the study of MOSFET semiconductor devices [1,7,20,21], the Robin coefficient p contains information on the quality and location of the non-accessible metal-to-silicon contact window, and voltage measurement u 0 on an accessible part is used to extract p.…”