Specific contact resistance measurements of metal-semiconductor junctions

Stavitski, N.; Dal, M.J.H. van; Wolters, R.A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

doi:10.1109/icmts.2006.1614265

Cited by 18 publications

(16 citation statements)

References 10 publications

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“…The validity of our results is based on the following: 1) systematic measurements and statistical data analysis (i.e., the represented data were averaged over 18 dies for each doping type and concentration), 2) experimental verification of the actual active doping concentrations and doping profiles by secondary ion-mass spectrometry (SIMS) and spreadingresistance-probe (SRP) techniques, 3) verification of the actual silicide lengths for different silicide segments by TEM analysis, and 4) optimizing the TLM structures in terms of the silicide lengths and the number of segments. The latter was a result of analyzing the existing TLM-structure design features that we use and by other researchers in their previous work [8], [20]. The optimized structures provided a better fit and a higher accuracy using the Scott method and, therefore, supported the data verification.…”

Section: Experimental Approachmentioning

confidence: 88%

“…Resistance values R ref and R i of all the fragments were measured, as explained in [20]. The fitting of the obtained R cmeas values with the Scott model [20] was carried out to extract the specific contact resistances.…”

Section: Resultsmentioning

confidence: 99%

“…The fitting of the obtained R cmeas values with the Scott model [20] was carried out to extract the specific contact resistances. The specific contact resistances, plotted as a function of the doping levels (1/ √ N ) for n-and p-HDD, are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, PtSi has been studied thoroughly [3], [17]- [19], providing a good reference. Silicideto-silicon contact resistance was investigated using a set of optimized test structures with silicided segments of varying lengths, based on the Scott model for TLM structures [8], [20]. The validity of our results is based on the following: 1) systematic measurements and statistical data analysis (i.e., the represented data were averaged over 18 dies for each doping type and concentration), 2) experimental verification of the actual active doping concentrations and doping profiles by secondary ion-mass spectrometry (SIMS) and spreadingresistance-probe (SRP) techniques, 3) verification of the actual silicide lengths for different silicide segments by TEM analysis, and 4) optimizing the TLM structures in terms of the silicide lengths and the number of segments.…”

Section: Experimental Approachmentioning

confidence: 99%

See 3 more Smart Citations

Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

Stavitski

Dal

Lauwers

et al. 2008

IEEE Electron Device Lett.

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Abstract-We present the data on specific silicide-to-silicon contact resistance (ρ c ) obtained using optimized transmission-line model structures, processed for a broad range of various n-and p-type Si doping levels, with NiSi and PtSi as the silicides. These structures, despite being attractive candidates for embedding in the CMOS processes, have not been used for NiSi, which is the material of choice in modern technologies. In addition, no database for NiSi-silicon contact resistance exists, particularly for a broad range of doping levels. This letter provides such a database, using PtSi extensively studied earlier as a reference.

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Section: Experimental Approachmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Experimental Approachmentioning

confidence: 99%

See 2 more Smart Citations

Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

Stavitski

Dal

Lauwers

et al. 2008

IEEE Electron Device Lett.

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“…At some scale the electrode contact area is never completely flat. There are non-conducting and conducting regions between contact area of an electrode and a sample [29][30][31]. This is due to the porous structure of textile materials and pressure force of the electrode.…”

Section: Textile Materialsmentioning

confidence: 99%

Electrical properties of flat textile material as inhomegeneous and anisotropic structure

Tokarska

Frydrysiak

Zięba

2013

J Mater Sci: Mater Electron

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The main purpose of the study was to present the basic problems of determining surface resistance of electroconductive fabric. The attention was paid to the arrangement of electrodes on a sample. Analysis of the contact resistance between the measuring electrode and the fibrous substrate was conducted. The multi-variant research of a textile sample has shown that the electrodes arrangement is of significance for sample resistance measurement results. The arrangement of four electrodes on the edge of the sample allows the assessment of electroconductive properties of whole textile sample surface. It was found that the woven fabric sample is not homegeneous and anisotropic. Research of textile material with the coaxial electrode arrangement enable the local values of material resistance to be assessed. Results of multi-variant research have provided important knowledge about the textile material structure and its properties.

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Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor

Lai

Wang

Hou

2022

Adv Funct Materials

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Broadband photodetectors with a wide ultraviolet (UV)-visible (vis)-nearinfrared (NIR) spectral response reduce cost and form factors in smart sensing systems by using one rather than multiple devices for versatile applications. However, simultaneously achieving broadband detection, high responsivity, and fast response time remains challenging. This study demonstrates a highperformance broadband amorphous In-Ga-Zn-O (a-IGZO) phototransistor using an engineered Ni/Ti bilayer metal contact. This device differs drastically from the conventional a-IGZO phototransistors in several aspects: 1) Pronounced photoresponse occurs at the device ON-state rather than the OFF-state. 2) A broadband response of 385-980 nm rather than a narrowband UV response. 3) Fast sub-ms response time with no persistent photocurrent. 4) High responsivity of exceeding 10 5 A W −1 . The external quantum efficiency exceeding 10 7 % and specific detectivity exceeding 10 15 Jones are also among the best of any UV-vis-NIR broadband photodetectors. The photoresponse is attributed to the light-sensitive source-drain series resistance at the ON-state. The Ni diffusion during postmetal annealing induces photoactive subgap states and modulates the conductivity of a-IGZO at the contact region. The superior performance using low-temperature processes and simple device structures as the widely available a-IGZO technology suggests a tremendous application potential of this broadband phototransistor.

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Specific contact resistance measurements of metal-semiconductor junctions

Cited by 18 publications

References 10 publications

Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

Electrical properties of flat textile material as inhomegeneous and anisotropic structure

Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor

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