Analysis and design aspects of a desaturation detection circuit for low voltage power MOSFETs

Wittig, Bjoern; Boettcher, Matthias; Fuchs, Friedrich W.

doi:10.1109/epepemc.2010.5606838

Cited by 14 publications

(8 citation statements)

References 7 publications

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“…This can be made the basis of a high speed protection circuit. The Witting paper [4] provides details of the detection and control circuitry that is additionally required.…”

Section: Overload Protection -Current Monitoringmentioning

confidence: 99%

“…This characteristic is not present in SiC MOSFETs. In the original design [4] the current was developed to respond to the rapid increase if the drain voltage as the power transistor is pulled into its constant current saturation region. As V Don is sensed directly via D3' in the case of the present system the circuit can respond even more rapidly.…”

Section: Overload Protection -Current Monitoringmentioning

confidence: 99%

See 1 more Smart Citation

Drive and protection methods for very high current lateral GaN power transistors

Roberts¹,

Klowak²,

Chen³

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper shows that it is possible for lateral GaN power transistors to provide very high current switching capability suitable for automotive applications if the device electrodes are overplated to enhance their current capacity. This solves the electromigration concerns that have previously limited the current capability of lateral GaN transistors. This paper describes drive circuitry that greatly reduces loop inductance issues. Also described are suitable high speed current monitoring, and short circuit protection circuitry.

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“…This can be made the basis of a high speed protection circuit. The Witting paper [4] provides details of the detection and control circuitry that is additionally required.…”

Section: Overload Protection -Current Monitoringmentioning

confidence: 99%

Section: Overload Protection -Current Monitoringmentioning

confidence: 99%

Drive and protection methods for very high current lateral GaN power transistors

Roberts¹,

Klowak²,

Chen³

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

show abstract

“…The protection setup con- sists of three main parts: sensing circuit, ultra fast comparator and signal processing circuit. Sensing circuit is leaned on [6,7,8,9] and consists of three resistors (R 1 , R 2 , R 3 ), two diodes (D 1 , D 2 ) and a measuring capacitor C 1 . It is recommended that the discrete elements should be produced in SMD technology and the connection layout must be well designed and optimized.…”

Section: Overcurrent Protection Circuitmentioning

confidence: 99%

Gate Driver with Overcurrent Protection Circuit for GaN Transistors

Derkacz

Musznicki

2019

ELECTROTECHNICAL REVIEW

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The improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protection with the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in the half-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse Test (DPT) conditions. Streszczenie.Ṕoniższy artykuł prezentuje zaawansowany sterownik bramkowy do tranzystorów mocy GaN. Proponowane rozwiązanie zawiera zabezpieczenie nadprądowe/przeciwprzeciążeniowe z dwustopniowym wyłączaniem oraz umożliwia niezależne ustawienie czasu włączenia i wyłączenia tranzystora. Działanie sterownika zostało zbadane symulacyjnie i doswiadczalnie w układzie przekształtnika półmostkowego. Proponowane zabezpieczenie tranzystora zostało przetestowane w warunkach podwójnego pulsu z obciążeniem indukcyjnym (DPT). (Sterownik bramkowy wraz z obwodem zabezpieczającym dedykowany do tranzystorów mocy GaN)

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“…Futhermore, there are symmetries in the short-circuit behaviour which allow a huge reduction of the failures to be examined. The 3L-NPC's short-circuit failures can be divided into three categories: Type1 Failures can be detected by desaturation detection [15], [16], [17] and can be cleared in a single converter phase-leg by simultaneously turning off all devices. Type2 Failures need additional hard-or software effort to be detected and/or cleared in a single converter phaseleg.…”

Section: A Categorization Of Failuresmentioning

confidence: 99%

Experimental investigation of short-circuit failures in a three level neutral-point-clamped voltage-source converter phase-leg with IGBTs

Sprenger

Alvarez

Tannhaeuser

et al. 2013

2013 IEEE Energy Conversion Congress and Exposition

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In the last years, the well known 3L-NPC VSC has been successfully transferred to low voltage high power applications. However, the study of short-circuit failures in a 3L-NPC phase-leg is still missing. This paper presents the theoretical and experimental investigation of short-circuit failures in a three level neutral-point-clamp voltage-source converter (3L-NPC VSC) phase-leg with IGBTs. A categorization of the failures is realized. Due to symmetries, there are only eight different types of failure that have to be investigated. A proposal of how to handle short-circuits in an 3L-NPC VSC IGBT phase-leg is presented.

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Analysis and design aspects of a desaturation detection circuit for low voltage power MOSFETs

Cited by 14 publications

References 7 publications

Drive and protection methods for very high current lateral GaN power transistors

Drive and protection methods for very high current lateral GaN power transistors

Gate Driver with Overcurrent Protection Circuit for GaN Transistors

Experimental investigation of short-circuit failures in a three level neutral-point-clamped voltage-source converter phase-leg with IGBTs

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