Drive and protection methods for very high current lateral GaN power transistors

Abstract

This paper shows that it is possible for lateral GaN power transistors to provide very high current switching capability suitable for automotive applications if the device electrodes are overplated to enhance their current capacity. This solves the electromigration concerns that have previously limited the current capability of lateral GaN transistors. This paper describes drive circuitry that greatly reduces loop inductance issues. Also described are suitable high speed current monitoring, and short circuit protection circuitry.

Linear temperature sensors in high-voltage GaN-HEMT power devices

“…in [5] and [6], however its temperature dependence is non-linear. A lookup table or a more complex model has to be used for the signal interpretation.…”

Building Blocks for GaN Power Integration

“…The integration of sensing with driver and power devices allows fast protection circuits. Temperature sensors [78] and current sensors based on shunts [79] or sense-FETs [80][81][82][83] can be integrated. A readout circuit for current sensors has also been published [23].…”

Three-Phase Motor Inverter and Current Sensing GaN Power IC

“…The parallel connection of a sense transistor (sense-FET, also called sense-HEMT or sense-GaN for GaN HEMTs [ 30 ]) does not require the critical loop to be cut, and can be also monolithically integrated with the GaN IC. GaN-based sense-FET ICs have been already demonstrated monolithically [ 31 , 32 , 33 , 34 , 35 , 36 , 37 ] and also by external wiring of several GaN devices [ 30 , 38 ] for single discrete transistors and used in half-bridges. This work focuses only on current-mirror sensing; other current sensing methods such as shunt-sensor [ 39 , 40 , 41 , 42 , 43 ] or hall-sensor [ 44 ] integration, as well as related magnetic flux concentrators [ 45 ] or magnetic sensors [ 46 ], were also demonstrated in GaN technologies.…”