Analysing the Crosstalk Effect of SiC MOSFETs in Half-Bridge Arrangements

Laird, Ian; Yuan, Xibo

doi:10.1109/ecce.2019.8913115

Cited by 16 publications

(6 citation statements)

References 9 publications

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“…Since during shoot-through, MOSFET is under saturation region operation. The shoot-through current I ST is approximated to MOSFET channel current and subject to (3). By expanding g f s in (3), it yields:…”

Section: Impact Of Temperaturementioning

confidence: 99%

“…This undesired effect has the MOSFET operating in semi-short-circuit and results in significant thermal loss as well as electrothermal stress which arises reliability concerns. Research is performed to evaluate crosstalk on planar SiC power MOSFETs [1], [2] & [3], but symmetrical and asymmetrical double-trench structures still remain largely unexplored.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

Yang

Jahdi

Stark

et al. 2021

IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society

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In this paper, the properties of crosstalk on SiC planar MOSFET, SiC symmetrical double-trench MOSFET and SiC asymmetrical double-trench MOSFET is investigated on a half-bridge topology, to enable analysis of the impact of temperature, drain-source transition speed and gate resistance on the severity of the shoot-through current and induced gate voltage. The experimental measurements, performed on a wide range of temperatures and switching rates, show that the two selected symmetrical and asymmetrical double-trench MOSFETs exhibit higher induced gate voltage during crosstalk with the same external gate resistance compared with the planar SiC MOSFET, yielding a higher shoot-through current. Therefore, in continuous initiation of intentional crosstalk, the two doubletrench MOSFETs experience more temperature rise, especially for symmetrical one which leads the device to verge of failure within minutes while the temperature rise in other two devices is significantly lower. The different trends of shoot-through current with temperature on DUTs reveals that they are dominated by different mechanisms, i.e., influenced by threshold voltage and inversion layer carriers' mobility. A model is developed for prediction of shoot-through current during crosstalk which is validated for the 3 device structures. The comparison of the modelled results with the measurement proves its capability to predict the crosstalk behaviour.

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Section: Impact Of Temperaturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

Yang

Jahdi

Stark

et al. 2021

IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society

View full text Add to dashboard Cite

show abstract

“…Moreover, the influence of oscillation frequency of power loop on the crosstalk voltage was studied in [18], and it was proposed that the optimal gate‐source shunt capacitance should be selected according to the oscillation frequency of power loop. [19] studied the influence of load current on crosstalk voltage, and it was concluded that the load current has great influence on the negative crosstalk voltage while there is almost no influence on the positive crosstalk voltage. In [20], the positive temperature characteristic of the crosstalk voltage was obtained by studying its variation with temperature.…”

Section: Introductionmentioning

confidence: 99%

Analytical models of the crosstalk voltage in SiC MOSFETs under different loads

Cai

Sun

et al. 2023

IET Power Electronics

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Due to the higher switching speed and lower threshold voltage of SiC MOSFET, its crosstalk issue is more serious than that of Si devices. Firstly, the mechanism and process of crosstalk under resistive load and inductive load are compared and analyzed. Then, a parameter decoupling method based on energy conservation is proposed, and an analytical model of the crosstalk voltage under resistive load is established. Moreover, an analytical model of the crosstalk voltage under inductive load with only device and circuit parameters is introduced. Furthermore, the influence of the drive resistance and the common source inductance on the crosstalk voltage under different loads is evaluated through the analytical model. Finally, a double pulse test is carried out to verify the validity of the analysis. The results presented here can provide guidance for the design of gate circuit parameters to regulate the crosstalk issue of SiC MOSFETs under different loads.

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“…While SiC MOSFETs bring in clear opportunities to enhance operating frequency, efficiency and power density, the ultrafast switching speed causes several undesirable side-effects, posing challenges in the application of SiC MOSFETs [13][14][15][16][17]. For example, converters using SiC MOSFETs are more susceptible to parasitic elements including circuit parasitic inductance/capacitance from PCB traces, power device itself and packaging, as well as load, causing excessive overshoots and ringings during switching transitions [14][15][16]. This would degrade the converter efficiency and increase device stress.…”

Section: Introductionmentioning

confidence: 99%

“…This would degrade the converter efficiency and increase device stress. Besides, high dv/dt of SiC MOSFETs can intensify crosstalk effects, producing spurious turn-on gate voltage or negative turn-off gate voltage in phase leg arrangements [14], which may cause short-circuit or device gate failure. Another issue is the electromagnetic interference (EMI) caused by the high dv/dt, and high switching frequency [17].…”

Section: Introductionmentioning

confidence: 99%

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

Zhou

Yuan

2020

IEEE Trans. on Ind. Applicat.

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SiC MOSFETs have shown superior characteristics to Si IGBTs, bringing in significant performance improvement such as enabling more compact, higher efficiency converters that are not feasible with conventional Si IGBTs. Currently, there is a lack of systematic and conclusive investigation into soft-switching inverters using SiC MOSFETs in comparison to Si IGBTs. This paper, therefore, presents a comparative evaluation of a softswitching inverter, i.e. the auxiliary resonant commutated pole inverter (ARCPI) using SiC MOSFETs or Si IGBTs. The switching transition, switching device current stress, neutral point ripple current, electromagnetic interference (EMI), efficiency and cost are compared on identical ARCPI setups, i.e. with the same PCBs and under identical driving conditions (gate drivers). Experimental results show that the ARCPI using SiC MOSFETs has better performance than that using Si IGBTs due to its faster switching speed. Firstly, the ARCPI using SiC MOSFETs performs full zero-voltage switching and the switching transition behaviour is more predictable. Unlike Si IGBTs, SiC MOSFETs have no turn-off tail current and forward voltage drop during switching transitions. Secondly, the ARCPI using SiC MOSFETs endures less current stress and smaller ripple current in dc-link capacitors. Thirdly, the ARCPI using SiC MOSFETs exhibits better EMI performance and higher efficiency. Specifically, a maximum 20 dBμV harmonic reduction can be achieved around 800 kHz and a 3.1% improvement in efficiency can be achieved at 6 kW.

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Analysing the Crosstalk Effect of SiC MOSFETs in Half-Bridge Arrangements

Cited by 16 publications

References 9 publications

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

Analytical models of the crosstalk voltage in SiC MOSFETs under different loads

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

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