An Improved Methodology for Extracting the Interface Defect Density of Passivated Silicon Solar Cells

Zhang, Xin; Duttagupta, Shubham; Tang, Minjin; Qiu, Zixuan; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

doi:10.1109/jphotov.2016.2576685

Cited by 18 publications

(14 citation statements)

References 29 publications

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“…"43 parameters. This follows early reports on the existence of such states [31,32], and recent work pointing out their importance [33,34]. From Figure 2 it is clear that charge at and near the Si-SiO2 interface can control the surface concentration of carriers, and thus the extent of surface recombination.…”

Section: Charge In the Srh Model Of Surface Recombinationsupporting

confidence: 83%

“…The least square fit to Glunz et al's model is represented by the dashed line. It requires a reduction in the band tails well below values reported in the literature [33,34], and results in a rather poor model for & between 0.5 to 3 kT/q, primarily due to the overestimated effect for large bandbending conditions. As expected, from the model fit we observe that a thermal oxide-silicon interface exhibits a reduction in interface state density upon FGA and nitride deposition due to hydrogenation [46][47][48][49].…”

Section: Modelling Silicon Lifetime Datamentioning

confidence: 91%

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Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

Bonilla

Al‐Dhahir

et al. 2020

Solar Energy Materials and Solar Cells

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The Si-SiO2 interface has and will continue to play a major role in the development of silicon photovoltaic devices. This work presents a detailed examination of how charge at or near this interface influences device performance. New understanding is identified on the effect of charge-induced potential fluctuations at the silicon surface. Such fluctuations have been considered in Si-SiO2 recombination models previously, where a universal value of electrical potential deviation was used to represent the effect. However, the approach disregards that the variation occurs in the charge concentration rather than the potential. We modify the models to accurately reflect fluctuations in external charge, allowing a precise representation of surface recombination velocity, with self-consistent !" , # , and $ parameters. Correctly accounting for these parameters can provide insights into the passivation mechanisms which can aid the development of future devices. Using the corrected model, we find that the effect of charge fluctuation at the Si-SiO2 interface is significant for the depletion regime to the weak inversion regime. This indicates that surface passivation dielectrics must operate with charge concentrations in excess of 2x10 12 q/cm 2 to avoid these effects. TCAD device simulations show that the efficiency of future PERC cells can improve up to 1% absolute when optimally charged dielectric coatings are applied both at the front and rear surfaces.

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Section: Charge In the Srh Model Of Surface Recombinationsupporting

confidence: 83%

Section: Modelling Silicon Lifetime Datamentioning

confidence: 91%

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

Bonilla

Al‐Dhahir

et al. 2020

Solar Energy Materials and Solar Cells

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show abstract

“…To extract the interface parameters, τs are fitted using the SRH recombination model and the formalism proposed by Girisch et al [28] to determine Ψs for any combination of Dit, Qf, σn and σp. Here we assume Dit to be temperatureindependent but energy-dependent, as the band tail states are critical for determining the surface potential [53]. The energy dependence is described by [44]:…”

Section: B Modelling Proceduresmentioning

confidence: 99%

Unravelling the silicon-silicon dioxide interface under different operating conditions

Nie

Hameiri²

2021

Solar Energy Materials and Solar Cells

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“…If the correlation is not good, change the gate voltages V G , N f and D it until the correlation meets the requirements; then output N f and D it at this time. The specific process is shown in Figure 1 [3][4][5] . The calculation formula of interface potential Ψ S is:…”

Section: Establishment Of the Mos Modelmentioning

confidence: 99%

Passivation effect analysis of passivation layer based on data analysis

Wang

2021

ACE

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The passivation layer of solar cells directly affects the performance of solar cells. The fixed charge density and defect density at the interface of the passivation layer are the key parameters to analyze the passivation effect. Through establishing the MOS model to simulate the capacitance-voltage (C-V) curve of the passivation layer, and using the function to express the simulation curve, this paper establishes the function-based database. The C-V curve obtained from the experiment is compared with the database to find the corresponding function of the experimental data. The passivation parameters Nf and Dit are extracted for analyzing the passivation effect of the passivation layer.

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An Improved Methodology for Extracting the Interface Defect Density of Passivated Silicon Solar Cells

Cited by 18 publications

References 29 publications

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

Unravelling the silicon-silicon dioxide interface under different operating conditions

Passivation effect analysis of passivation layer based on data analysis

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