Passivation effect analysis of passivation layer based on data analysis

Abstract

The passivation layer of solar cells directly affects the performance of solar cells. The fixed charge density and defect density at the interface of the passivation layer are the key parameters to analyze the passivation effect. Through establishing the MOS model to simulate the capacitance-voltage (C-V) curve of the passivation layer, and using the function to express the simulation curve, this paper establishes the function-based database. The C-V curve obtained from the experiment is compared with the database to find the corresponding function of the experimental data. The passivation parameters Nf and Dit are extracted for analyzing the passivation effect of the passivation layer.