An improved method of MOSFET modeling and parameter extraction

Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction

“…A lot of methods have been proposed for the MOSFET parameter extraction but they are generally restricted to the above threshold region and mostly assume that the inversion charge varies linearly with gate voltage overdrive [1][2][3][4][5][6][7][8][9][10][11]. As the supply voltage Vdd is reduced with device scaling, the operating gate bias moves closer to the threshold voltage (near threshold operation), and the assumption that the inversion charge varies approximately linearly with gate voltage overdrive becomes less and less accurate.…”

Analysis of a high-performance ultra-thin body ultra-thin box silicon-on-insulator MOSFET with the lateral dual-gates: featuring the suppression of the DIBL

“…The symbols (t oxf , t si , t oxb , t sub , and x d ) used in Fig. 1 (Krutsick et al 1987). Figure 2 shows the electron concentration along the frontchannel of both structures in a log scale with different V G_C , at the constant V G_M = 1.2 V, V DS = 1.2 V, and V sub = 0 V. And the gate voltage of the conventional UTBB SOI device is also set to the constant 1.2 V. In spite of no direct voltage bias on the gap, it is observed that the electron concentration under the gap is none-zero under all dependent voltage difference conditions.…”

New Y -function based MOSFET parameter extraction method from weak to strong inversion range

“…Several methods have been proposed for the MOSFET parameter extraction but they are restricted to the above or near threshold voltage (V t ) region and assume that the inversion charge Q i varies linearly with gate voltage overdrive V gt as Q i % C ox Á V gt , C ox being the gate oxide capacitance [1][2][3][4][5][6][7][8][9][10][11]. For instance, in Refs.…”

“…For instance, in Refs. [1,6,10] procedures are proposed to extract the threshold voltage value. In Refs.…”

“…Experimental (solid lines) and modeled (symbols) (c) Q i (V g ) and (d) C gc (V g ) characteristics. Parameters: C ox = 1.83 Â 10 À6 F/cm 2 and n = 1.1.If l eff is attenuated at strong inversion according to a first order law of the form[1,2,13],…”