An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

Liang, Mei; Zheng, Trillion Q.; Li, Yan

doi:10.6113/jpe.2016.16.1.374

Cited by 32 publications

(14 citation statements)

References 24 publications

(41 reference statements)

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“…Two other groups [8], [9], have also estimated the switching loss by modeling iCH for specific power MOSFETs and SiC transistors. However, in a real life scenario, iCH flows inside a packaged MOSFET and cannot be directly measured, while calculating it by analytical modeling is time consuming and device-specific [5]- [9]. In Section IV, we aim to address these limitations by proposing a measurement method to extract iCH for all types of transistors.…”

Section: Referring Tomentioning

confidence: 99%

“…This knowledge aids in the selection of the appropriate MOSFET for a particular application. In response to this need, various modeling and simulation techniques have been used to analyze the difference between iCH from iD and the impact of this difference on the switching power losses [3]- [9]. Although simulation-based analyses provide useful insights, measurements with real MOSFETs and in real circuits are necessary to obtain the ultimate results.…”

Section: Introductionmentioning

confidence: 99%

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Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

et al. 2020

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Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals. However, this technique does not separate the switching power due to the resistance of the MOSFET channel and due to the parasitic capacitances. In this paper, we propose a measurement method to extract the power dissipation due to the parasitic capacitances of a MOSFET, providing useful information for device selection and for the design of efficient power electronic systems. The proposed method is demonstrated on a basic boost converter. The proposed method shows that the existing method underestimates the turn-On losses by 41% and overestimates the turn-Off losses by 35%. INDEX TERMS Channel current, current diversion phenomenon, COSS losses, efficiency, power losses, power MOSFET, switching losses.

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Section: Referring Tomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

et al. 2020

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“…According to operation mechanism of the SiC MOSFET, the voltage commutation is mainly determined by gate resistance, drain and source inductances, and junction capacitances (C gs , C gd , and C ds ) [24,25]. The switching ringing can be attributed to the resonance between output capacitance (C oss = C gd + C ds ) and summation of stray inductance in the circuit [23].…”

Section: Simplified Modeling Of the Sic Mosfetmentioning

confidence: 99%

Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC-Based Motor Drive

Yin

et al. 2020

Energies

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The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency, power density, and reliability. However, the fast switching transient and serious switching ringing of the SiC MOSFET can cause unwanted high-frequency (HF) electromagnetic interference (EMI), which may significantly reduce the reliability of the motor drive in many aspects. In order to comprehensively reveal the mechanism of the EMI previously used in motor drives using SiC MOSFET, this paper plans to analyze the influences of both HF impedance of the motor and switching characteristics of the SiC MOSFET. A simulation model for motor drives has been proposed, which contains the HF circuit model of the motor as well as a semi-behavioral analytical model of the SiC MOSFET. Since the model shows a good agreement with the experimentally measured results on spectra of drain-source voltage of the SiC MOSFET (vds), phase to ground voltage of the motor (vphase), CM voltage (vcm), phase current of the motor (idm), and CM current (icm), it can be adopted to quantitatively investigate the influence of the motor impedance on EMI through frequency-domain analysis. Additionally, the impacts of switching characteristics of SiC MOSFET on EMI are also well studied according to relative experiment results in terms of switching speed, switching frequency, and switching ringing. Based on the analysis above, the relationship between motor impedance, switching characteristics of the SiC MOSFET, and HF EMI can be figured out, which is able to provide much helpful assistance for application of the motor drive.

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“…The categorization and characteristics of different modeling methods on power semiconductor devices were also reported in this literature. Some effects were considered in these models, such as temperature-dependent gate threshold voltage, temperature-dependent carrier mobility, nonuniform current distribution, and so on [11]- [13]. Another important characteristic of trap density at the SiC/SiO 2 interface was also included in some SiC MOSFET models.…”

Section: Introductionmentioning

confidence: 99%

SPICE Modeling of SiC MOSFET Considering Interface-Trap Influence

et al. 2018

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SPICE modeling of silicon carbide (SiC) MOSFET considering the influence of interface traps has been carried out, which is able to describe the characteristics of the MOS transistors in all operation modes at different interface trap densities and measurement temperatures. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expression, which can exactly reflect the effect of SiC/SiO 2 interface traps on the electrical characteristics of SiC MOSFET. Key parameters in the advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The static characteristics of the developed SiC MOSFET model have been validated with the production Datasheet, and the dynamic characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO 2 interface-trap densities on the switching performances of SiC MOSFET has been quantitatively discussed, and reasonable gate driving voltage of SiC MOSFET with different interface-trap densities has been revealed.

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An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

Cited by 32 publications

References 24 publications

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

Modeling and Experimental Investigation of Electromagnetic Interference (EMI) for SiC-Based Motor Drive

SPICE Modeling of SiC MOSFET Considering Interface-Trap Influence

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