An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications

Yoshimasu, Toshihiko; Akagi, Masataka; Tanba, N.; Hara, Shinji

doi:10.1109/4.711326

Cited by 103 publications

(41 citation statements)

References 13 publications

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“…On the assumption that V ref2 is a constant voltage, V be2 will decrease when i be1 increases with the input RF power. However, due to the clamping and rectification effect of the base emitter diode of power transistor, V ref2 also decreases with the increasing input signal power of T 4 [10]. On the assumption that V e2 is a fixed voltage, the base current will be changed by i be2 when the input RF power at base terminal of T 4 increases.…”

Section: Analysis Of Bias Circuitmentioning

confidence: 99%

“…(9) Since T 1 and T 2 are identical, their base currents can be assumed as I b1 = I b2 (10) In order to analyze the relationship between V be2 and i be1 , by substituting Eqs. (4) and (10) into Eq.…”

Section: Analysis Of Bias Circuitmentioning

confidence: 99%

“…The traditional bias circuit is simply composed of two series resistors [10]. With the increase of input radio frequency (RF) power, the average direct current (DC) will increase, and base emitter voltage will decrease due to rectification of base emitter diode of power transistor, which will cause gain compression and phase distortion.…”

Section: Introductionmentioning

confidence: 99%

“…With the increase of input radio frequency (RF) power, the average direct current (DC) will increase, and base emitter voltage will decrease due to rectification of base emitter diode of power transistor, which will cause gain compression and phase distortion. In order to solve this problem, researchers use an integrated diode linearizer bias circuit [10]. This bias circuit can compensate the variation of base emitter voltage to keep collector current of power transistor steady.…”

Section: Introductionmentioning

confidence: 99%

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Design of 900 MHZ Sige Power Amplifier With Linearization Bias Circuit

Zhang¹,

Zhang²,

Fu³

et al. 2016

PIER C

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Abstract-A single stage 900 MHz power amplifier (PA) with linearization bias circuit is designed with HHNEC 0.5 µm BIS500G power SiGe BiCMOS process. It is implemented by single-ended common emitter structure as a class AB power amplifier. The adopted active bias circuit is originally explained by using two virtue current sources, so that the mechanism of the improvement of linearity can be described more clearly. Then the mechanism is applied to guide the design of a power amplifier with an active bias circuit, which shows better linearity than resistor biased power amplifier by simulation. Through further design and measurement, the fabricated single stage power amplifier exhibits output power 1 dB compression point (OP1 dB) of 18.9 dBm, with power added efficiency (PAE) of 26.75% and power gain of 20.9 dB under 3.3 V voltage supply.

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Section: Analysis Of Bias Circuitmentioning

confidence: 99%

Section: Analysis Of Bias Circuitmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Design of 900 MHZ Sige Power Amplifier With Linearization Bias Circuit

Zhang¹,

Zhang²,

Fu³

et al. 2016

PIER C

View full text Add to dashboard Cite

show abstract

“…Such very low leakage diodes may have applications in the power supply for mobile communication devices where they could increase standby time. 18 On the other hand, the ability to invert the rectification direction of the diode could have applications in high speed signal processing. 19 Devices were fabricated by growing single walled nanotubes (SWNTs) on a SiO 2 /Si wafer by ethanol chemical vapour deposition with 0.1 nm of Co catalyst patterned using photolithography.…”

mentioning

confidence: 99%

An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

Hughes

Homewood

Curry

et al. 2013

Applied Physics Letters

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A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10−16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10−14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact.

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