Abstract:Abstract-A single stage 900 MHz power amplifier (PA) with linearization bias circuit is designed with HHNEC 0.5 µm BIS500G power SiGe BiCMOS process. It is implemented by single-ended common emitter structure as a class AB power amplifier. The adopted active bias circuit is originally explained by using two virtue current sources, so that the mechanism of the improvement of linearity can be described more clearly. Then the mechanism is applied to guide the design of a power amplifier with an active bias circui… Show more
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