An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

Abstract

A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10−16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10−14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact.

Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts

“…The Schottky barrier because of a difference of Fermi level of the semiconductor and the work function of the metal, play an important role to determine the performance of a diode. [28][29][30] In this research, the MoTe 2 based eld effect transistor (FET) is formed by using asymmetric metals contacts chromium/gold (Cr/Au) and palladium/gold (Pd/Au) to understand the charge carrier transport and the interface characteristics at the junction. It is found that MoTe 2 forms an ohmic contact with Pd/Au whereas a Schottky barrier is observed with Cr/Au.…”

n-type chalcogenides by ion implantation

“…Conductivity measurements were made by taking current-voltage (I-V) scans laterally across the films using a Keithley 4200 SCS setup incorporating remote preamplifiers within a Faraday cage 31 . For thermopower measurements, we heated below one electrical contact with a d.c. heating element and measured the temperature at each contact with a thermocouple.…”

Cup‐Stacked Carbon Nanotube Schottky Diodes for Photovoltaics and Photodetectors

“…[28][29][30] Nevertheless, even if such devices allowed sharp investigation of the optical excitation processes involved in CNT, [ 30 ] it seems hardly reliable for large scale applications implementation. On the other hand, engineering of Schottky barriers has been widely investigated using various high/low work function metal electrodes association: Pd/Ti, [ 31 ] Pt/Ti, [ 32 ] Al/Au, [ 33 ] Pd/Al, [ 34,35 ] Mg/Ni, [ 36 ] and Sc/Pd. [ 37 ] Such devices were shown to be able to behave as rectifi er diodes.…”