1993
DOI: 10.1063/1.353807
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An electromigration model that includes the effects of microstructure and temperature on mass transport

Abstract: A model for electromigration in thin metal film interconnects is presented that includes two components of diffusion. The grain-boundary and lattice components of mass transport are considered in terms of their temperature dependence and the metallurgical ‘‘structure’’ of patterned planar interconnects. Interconnect structure is defined in terms of single- and polycrystalline line segments, which result from the local grain microstructure for a patterned interconnect line. The dependence of the diffusional flu… Show more

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Cited by 20 publications
(15 citation statements)
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“…where the t u50_E is the median lifetime at T E ͑K͒ and j E ͑ϭ1 MA/cm 2 ), T is the absolute temperature, k is the Boltzmann 11 It is an assumption that the preexponential factor, t u50_E for single grain segments and polygrain segments in Black's equations are the same at T ϭT E . The T E of aluminum is typically within the range between 300 and 400°C and the value of T E ϭ 350°C is chosen for our study.…”
Section: Advanced Failure Unit Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…where the t u50_E is the median lifetime at T E ͑K͒ and j E ͑ϭ1 MA/cm 2 ), T is the absolute temperature, k is the Boltzmann 11 It is an assumption that the preexponential factor, t u50_E for single grain segments and polygrain segments in Black's equations are the same at T ϭT E . The T E of aluminum is typically within the range between 300 and 400°C and the value of T E ϭ 350°C is chosen for our study.…”
Section: Advanced Failure Unit Modelmentioning
confidence: 99%
“…The T E of aluminum is typically within the range between 300 and 400°C and the value of T E ϭ 350°C is chosen for our study. 11 As a result, if the value of Ea _SG , Ea _PG , and t u50_E were determined, then t u50_PG and t u50_SG can be determined at a given temperature from Eqs. ͑7͒ and ͑8͒.…”
Section: Advanced Failure Unit Modelmentioning
confidence: 99%
“…In general, the Cu conductor has a near-bamboo grain structure, being composed of single-crystal and polycrystalline segments in series. The polycrystalline fraction, p=Lp/(Lp+Ls), where L p and L s are the mean polycrystalline and single-crystal length (Fig.3), is determined by the trench width [8]. Due to the difficulty in growing grains in narrow trenches, microstructure is increasingly polycrystalline with feature size reduction.…”
Section: The Drift Velocity As a Function Of Microstructurementioning
confidence: 99%
“…Considering the effect of microstructure, Dreyer et al developed a model for electromigration lifetimes. 4 The model separates mass transport into two distinct components: grain boundary and lattice diffusions, and expresses the effective diffusivity of an interconnect as sum of contribution from each individual component. However, in a near bamboo structure interconnect, the bamboo segments and polygranular clusters are in series.…”
Section: Introductionmentioning
confidence: 99%