An economic CVD technique for pure SnO 2 thin films deposition: Temperature effects

Abstract

A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has been studied. The best sheet resistance obtained at substrate temperature of 500 • C was about 27 /cm 2. X-ray diffraction showed that the structure of deposited films was polycrystalline with a grain size between 150-300 Å. The preferred orientation was (211) for films deposited at substrate temperature of about 500 • C. FESEM micrographs revealed that substrate temperature is an important factor for increasing grain size and modifies electrical parameters. UV-visible measurement showed reduction of transparency and bandgap of the layers with increasing substrate temperature. Keywords. SnO 2 thin films; substrate temperature; air pressure CVD.

Dependence of Si/SnO2 Heterojunction Properties on Growth Temperature and Type of Silicon**

“…It is clear from the Figure that, with increasing substrate temperature, the band‐gap of tin oxide decreases. This result was proved in our previous work in which tin oxide films were grown on glass substrates at various temperatures …”

“…Thereby the forward current rapidly increases under a higher voltage bias. When the substrate temperature is increased during the deposition of SnO 2 , the carrier concentration increases and hence the Fermi level shifts towards the bottom of the conduction band. This means that, upon increase of substrate temperature, the Fermi level may even move into the conduction band, resulting in the easy flow of electrons from the SnO 2 side to the p‐type Si side.…”

Electrochemical and fluorescence properties of SnO2 thin films and its antibacterial activity

“…Similarly, band gap energy was reported in the range of 3.50 -1.60 eV [46][47][48][49] for SnO 2 films.…”

Structural and Electrical Properties of SnO2:F Thin Films Prepared by Chemical Vapor Deposition Method

“…Deposition was carried out in a previously adapted home-made air pressure chemical vapor deposition by our colleagues in another work [29], schematically shown in 0.1 g of SnCl 2 powder was added to different amounts of NaF (ranging 2-30 wt%) as the precursor. The layers structures were studied by X-ray diffraction (XRD) using an X-ray diffractometer with 1.54060 Å Cu K α ray (PHILIPS PW 1840 apparatus).…”