Dependence of Si/SnO₂ Heterojunction Properties on Growth Temperature and Type of Silicon^**

Abstract

Polycrystalline pure tin oxide thin films of tetragonal rutile structures are deposited on two kinds of single-crystal and polycrystalline p-type Si at three substrate temperatures of 300, 400, and 500°C. Structural, electrical, and optical properties of these thin films are characterized by X-ray diffraction (XRD), two-point probe method, and UV-vis spectrophotometry, respectively. I-V measurements of these heterojunctions show that the barrier height and series resistance will increase with increasing substrate temperature in single-crystal Si, while in polycrystalline Si, they will decrease. These heterojunctions are found to be rectifying with a maximum forward-to-reverse current ratio of about 1000 in the applied voltage range À4 V to þ4 V for single-crystal Si/SnO 2 .

Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD

“…As in our previous studies about the effect of oxygen flow rate and substrate temperature, all polycrystalline films show peaks related to (110), (101), (211), (200), (220), (301), and (310) planes . The intensities of (110), (200), and (211) peaks are stronger than the others.…”

“…Unlike our previous studies in which (211) was the preferred orientation, in this paper (110) is the preferred orientation in all cases . This may have occurred for two reasons.…”

“…In the present work, we want to obtain pure nanostructured thin films of TO with acceptable resistivity of about 10 −3 Ω cm and also with transparency of about 80% in order to be applicable in solar cell applications . In our two previous studies, we investigated the effect of substrate temperature and oxygen flow rate as two effective parameters to optimize a good transparent conducting oxides (TCO) layer . We now try to change the substrate angle relative to the source, which has been less considered up to now, and explore the effect of this parameter on the electrical, structural, morphological, and optical characteristics of TO thin films.…”

Experimental study and theoretical calculation on the conductivity and stability of praseodymium doped tin oxide electrode

“…Adding rare earth oxide in coating is the same as introducing the impurities [25,26] such as Si, P in the SnO 2 semiconductor materials, the introduction of donor or acceptor level can reduce the band gap, so as to improve the conductivity of electrode materials.…”