An analytic model for the MIS tunnel junction

Tarr, N. G.; Pulfrey, D.L.; Camporese, D.S.

doi:10.1109/t-ed.1983.21442

Cited by 62 publications

(60 citation statements)

References 24 publications

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“…This model was later modified to give semi-analytic expressions, for easier modeling and comparison to experimental current-voltage (I-V) characteristics. [103] In recent years interest in thin insulator MIS increased again because of continuing CMOS miniaturization. [104,105] We adapted the approach from Ref.…”

Section: Basic Metal/insulator/semiconductor (Mis) Electrostaticsmentioning

confidence: 99%

“…[104,105] We adapted the approach from Ref. [103] to molecular organic insulators and summarize below the relevant features of that analysis.…”

Section: Basic Metal/insulator/semiconductor (Mis) Electrostaticsmentioning

confidence: 99%

“…Adding an Interfacial Insulator C SC influences tunneling currents by controlling the interface carrier density available for tunneling across the insulator. Conversely, the insulator affects the basic electrostatic balance of Equation (1), by adding three possible contributions: the potential drop across the insulator, measured from semiconductor side to metal, and two dipolar potential steps at the two internal interfaces, the sum of which is C I , so that for n-type Equation (1) becomes: [102,103,105] [a] Fourier transform IR. [b] Atomic force microscopy.…”

Section: Electrostatics Of Metal/semiconductor (Ms) Junctionmentioning

confidence: 99%

“…To use such a series-connected model we need to know the applied bias distribution across the system, a problem that can be solved only numerically. [102,103] Unfortunately, fits with these numerical models are generally not unique. [149] An alternative approach relies on identifying conditions for which essentially all the bias falls across either the semiconductor or the insulator.…”

Section: Extraction Of Semiconductor Parametersmentioning

confidence: 99%

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Molecules on Si: Electronics with Chemistry

et al. 2009

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Basic scientific interest in using a semiconducting electrode in molecule‐based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test‐bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor‐molecule electronics we need reproducible, high‐yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide‐free Si. describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified. investigate to what extent imperfections in the monolayer are important for transport across the monolayer. revisit the concept of energy levels in such hybrid systems.

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Section: Basic Metal/insulator/semiconductor (Mis) Electrostaticsmentioning

confidence: 99%

“…[104,105] We adapted the approach from Ref. [103] to molecular organic insulators and summarize below the relevant features of that analysis.…”

Section: Basic Metal/insulator/semiconductor (Mis) Electrostaticsmentioning

confidence: 99%

Section: Electrostatics Of Metal/semiconductor (Ms) Junctionmentioning

confidence: 99%

Section: Extraction Of Semiconductor Parametersmentioning

confidence: 99%

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Molecules on Si: Electronics with Chemistry

et al. 2009

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“…Our model is formed based on two basic assumptions that: (i) the hole tunneling current through the insulating layer is much smaller than the current due to electron tunneling, and (ii) the electron diffusion current at the edge of the depletion region is much larger than the generation-recombination current in the depletion region. Accordingly, the hole tunneling current is ignored and the net electron tunneling current density is considered to be equal to the electron diffusion current density at the edge of the depletion region (Tarr et al 1983); see Equations (1)-(4). Figure 1b depicts the band diagram of an MIS device in reverse bias featuring a multi-barrier structure as the insulating layer.…”

Section: Dark Current Calculationsmentioning

confidence: 99%

Modeling of Metal–Insulator–Semiconductor Dualband Si/SiO₂Multi-Quantum Well UV Detectors

Rostami

Leilaeioun

Golmohammadi

et al. 2012

International Journal of Optomechatronics

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This article intends to propose a self-consistent theoretical model for Metal-InsulatorSemiconductor (MIS) dualband Si/SiO 2 multi-quantum well (MQW) UV photodetector. Employing this model, general characteristics of MIS UV photodetectors such as dark and photocurrent density-voltage (J-V) curves are simulated. The results reveal that the proposed structure reduces dark current since first the resonant tunneling multi-barrier is designed such that the electron tunneling probability is unity at energies coincident with the peak detection wavelength, and secondly, tunneling significantly decreases at energies which are smaller than this optimum value and accordingly, transport of carriers contributing to the dark current, which have broad energy distribution at high temperatures, is inhibited. Moreover, the article demonstrates that the proposed structure can detect two individual x wavelengths in the UV range, simultaneously. The related absorption and responsivity curves are obtained and depicted. Defects in the SiO 2 barriers are simulated indirectly by varying the electron effective tunneling mass in SiO 2 . Reductions in the SiO 2 electron effective tunneling mass lead to an increase in dark current of the device.

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Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions

Maman

Templeman

Manis-Levi

et al. 2018

Adv Materials Inter

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widespread use in solar cells and microelectronic devices. [1][2][3][4][5] In solar cells, the incorporation of the thin insulating layer enables reduction of leakage currents leading to overall improved efficiency. Certain electronic components, such as MIS diodes, depend on the insulator properties, which, if tuned properly, will perform current multiplication, thus acting as electronic switches. [6,7] A common application of MIS and SIS junctions is in electromagnetic radiation detection, [1] where excited charge carriers, driven by the depletion layer's electric field, tunnel through a thin insulating layer. To date, MIS and SIS junctions were incorporated as electromagnetic radiation detectors for the ultraviolet (UV), visible, and infrared (IR) spectral regions, where the wavelength sensitivity is determined by the choice of metal (work function) and the semiconductor (bandgap) materials. As examples, UV MIS detectors were presented using Si/SiO 2 core-shell particles, [8] and visible blind IR detectors were constructed using multilayers of SiO 2 /TiO 2 in a MIS structure. [9] In order to push the detection limits into the short wavelength infrared (SWIR) spectral band (1.3-1.5 um), Yu et al. combined Ge based detectors with insulators using low temperature diffusion processing. [10] Other devices where amorphous insulating layers play an important role are thin film transistors. Amorphous oxides have many advantages including high optical transparency, high electron mobility, and homogeneous microstructure with no grain boundaries. [11] The device structure and material properties, e.g., metal work function, insulator thickness/composition, and semiconductor type/doping level, all play crucial roles in determining device electrical properties and efficiency.The most common insulating materials in such devices are oxides of the semiconductor layer. To form the oxide layer, the semiconductor surface is typically exposed and chemically reacted with either wet or dry oxygen at elevated temperatures prior to film deposition. Control over the thickness is achieved through reaction parameters, such as duration and temperature. [12] Tuning oxide thickness is crucial for device performance; too thin an oxide results in negligible barrier, while too thick results in complete insulation. Many theoretical studies attempted to pinpoint the exact role of the insulating layer, however, it appears that several mechanisms take place simultaneously, and different thickness regimes should be individually considered. [6,13] As an example, in an Al-SiO 2 -SiThe electronic properties of the heterojunction formed by chemical bath deposition of a thorium-and oxygen-doped PbS nanostructured layer on GaAs substrate as a function of postgrowth thermal treatments are studied. A correlation is found between the heterojunction conductance and the duration of thermal treatment in air. In contrast to previous reports on the effect of air annealing on PbS films, where the conductance increased due to oxygen incorporation within the PbS, i...

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An analytic model for the MIS tunnel junction

Cited by 62 publications

References 24 publications

Molecules on Si: Electronics with Chemistry

Molecules on Si: Electronics with Chemistry

Modeling of Metal–Insulator–Semiconductor Dualband Si/SiO₂Multi-Quantum Well UV Detectors

Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions

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An analytic model for the MIS tunnel junction

Cited by 62 publications

References 24 publications

Molecules on Si: Electronics with Chemistry

Molecules on Si: Electronics with Chemistry

Modeling of Metal–Insulator–Semiconductor Dualband Si/SiO2Multi-Quantum Well UV Detectors

Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions

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Product

Resources

About

Modeling of Metal–Insulator–Semiconductor Dualband Si/SiO₂Multi-Quantum Well UV Detectors