widespread use in solar cells and microelectronic devices. [1][2][3][4][5] In solar cells, the incorporation of the thin insulating layer enables reduction of leakage currents leading to overall improved efficiency. Certain electronic components, such as MIS diodes, depend on the insulator properties, which, if tuned properly, will perform current multiplication, thus acting as electronic switches. [6,7] A common application of MIS and SIS junctions is in electromagnetic radiation detection, [1] where excited charge carriers, driven by the depletion layer's electric field, tunnel through a thin insulating layer. To date, MIS and SIS junctions were incorporated as electromagnetic radiation detectors for the ultraviolet (UV), visible, and infrared (IR) spectral regions, where the wavelength sensitivity is determined by the choice of metal (work function) and the semiconductor (bandgap) materials. As examples, UV MIS detectors were presented using Si/SiO 2 core-shell particles, [8] and visible blind IR detectors were constructed using multilayers of SiO 2 /TiO 2 in a MIS structure. [9] In order to push the detection limits into the short wavelength infrared (SWIR) spectral band (1.3-1.5 um), Yu et al. combined Ge based detectors with insulators using low temperature diffusion processing. [10] Other devices where amorphous insulating layers play an important role are thin film transistors. Amorphous oxides have many advantages including high optical transparency, high electron mobility, and homogeneous microstructure with no grain boundaries. [11] The device structure and material properties, e.g., metal work function, insulator thickness/composition, and semiconductor type/doping level, all play crucial roles in determining device electrical properties and efficiency.The most common insulating materials in such devices are oxides of the semiconductor layer. To form the oxide layer, the semiconductor surface is typically exposed and chemically reacted with either wet or dry oxygen at elevated temperatures prior to film deposition. Control over the thickness is achieved through reaction parameters, such as duration and temperature. [12] Tuning oxide thickness is crucial for device performance; too thin an oxide results in negligible barrier, while too thick results in complete insulation. Many theoretical studies attempted to pinpoint the exact role of the insulating layer, however, it appears that several mechanisms take place simultaneously, and different thickness regimes should be individually considered. [6,13] As an example, in an Al-SiO 2 -SiThe electronic properties of the heterojunction formed by chemical bath deposition of a thorium-and oxygen-doped PbS nanostructured layer on GaAs substrate as a function of postgrowth thermal treatments are studied. A correlation is found between the heterojunction conductance and the duration of thermal treatment in air. In contrast to previous reports on the effect of air annealing on PbS films, where the conductance increased due to oxygen incorporation within the PbS, i...